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MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers 期刊论文
Key Engineering Materials, 2013, 卷号: 552, 页码: 389-392
Authors:  Zhang, Tiancheng;  Ni, Qinfei;  Liu, Xuezhen;  Yu, Bin;  Wang, Yuxia;  Zhang, Yu;  Ma, Xunpeng;  Wang, Yongbin;  Xu, Yun
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High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 4, 页码: 044006
Authors:  Zhang, Yu;  Wang, Yongbin;  Xu, Yingqiang;  Xu, Yun;  Niu, Zhichuan;  Song, Guofeng
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一种制备GaSb基分布反馈激光器中光栅的系统及方法 专利
专利类型: 发明, 公开日期: 2012-07-04
Inventors:  王永宾;  张晶;  徐云;  宋国锋;  陈良惠
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