Browse/Search Results:  1-3 of 3 Help

  Show only claimed items
Selected(0)Clear Items/Page:    Sort:
MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers 期刊论文
Key Engineering Materials, 2013, 卷号: 552, 页码: 389-392
Authors:  Zhang, Tiancheng;  Ni, Qinfei;  Liu, Xuezhen;  Yu, Bin;  Wang, Yuxia;  Zhang, Yu;  Ma, Xunpeng;  Wang, Yongbin;  Xu, Yun
Adobe PDF(324Kb)  |  Favorite  |  View/Download:536/212  |  Submit date:2014/04/28
High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 4, 页码: 044006
Authors:  Zhang, Yu;  Wang, Yongbin;  Xu, Yingqiang;  Xu, Yun;  Niu, Zhichuan;  Song, Guofeng
Adobe PDF(282Kb)  |  Favorite  |  View/Download:846/231  |  Submit date:2013/04/19
一种制备GaSb基分布反馈激光器中光栅的系统及方法 专利
专利类型: 发明, 公开日期: 2012-07-04
Inventors:  王永宾;  张晶;  徐云;  宋国锋;  陈良惠
Adobe PDF(1205Kb)  |  Favorite  |  View/Download:400/88  |  Submit date:2014/10/31