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Residual impurities and electrical properties of undoped LEC InAs single crystals 期刊论文
半导体学报, 2010, 卷号: 31, 期号: 4, 页码: 042001-1-042001-4
Authors:  Hu Weijie;  Zhao Youwen;  Sun Wenrong;  Duan Manlong;  Dong Zhiyuan;  Yang Jun
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半绝缘InP中深能级缺陷对电学性质的影响和缺陷的控制 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 524-529
Authors:  赵有文;  董志远;  李成基;  段满龙;  孙文荣
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高质量InAs单晶材料的制备及其性质 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 8, 页码: 1391-1395
Authors:  赵有文;  孙文荣;  段满龙;  董志远;  杨子祥;  吕旭如;  王应利
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磷化铟单晶衬底的缺陷控制和高质量表面制备 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 12, 页码: 2127-2133
Authors:  赵有文;  董志远;  孙文荣;  段满龙;  杨子祥;  吕旭如
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Non-stoichiometry Related Deep Level Defects in Semi-insulating InP 期刊论文
人工晶体学报, 2004, 卷号: 33, 期号: 4, 页码: 535-538
Authors:  Zhao Youwen;  Dong Zhiyuan;  Duan Manlong;  Sun Wenrong;  Yang Zixiang;  Lu Xuru;  Wang Yingli
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提高(100)晶向磷化铟单晶的成晶率和质量的研究 期刊论文
人工晶体学报, 2003, 卷号: 32, 期号: 5, 页码: 460-463
Authors:  赵有文;  段满龙;  孙文荣;  杨子祥;  焦景华;  赵建群;  曹慧梅;  吕旭如
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