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The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots 期刊论文
JOURNAL OF OPTICS, 2010, 卷号: 12, 期号: 5, 页码: Art. No. 055203
Authors:  Huang X (Huang X.);  Zhang XH (Zhang X. H.);  Zhu YG (Zhu Y. G.);  Li T (Li T.);  Han LF (Han L. F.);  Shang XJ (Shang X. J.);  Ni HQ (Ni H. Q.);  Niu ZC (Niu Z. C.);  Zhang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xinhuiz@semi.ac.cn
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Inas Quantum Dots  Nonlinear Refraction  Reflection Z-scan  Dc Electric Field Effect  Electrooptic Properties  Saturable Absorber  Optical-properties  Well Structures  Single-beam  Band-gap  Electroabsorption  Absorption  Reflection  Dependence