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Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence 期刊论文
Nanotechnology, 2019, 卷号: 30, 期号: 4, 页码: 045604
Authors:  Shaoteng Wu;  Liancheng Wang;  Zhiqiang Liu;  Xiaoyan Yi;  Yunyu Wang;  Cheng Cheng;  Chen Lin;  Tao Feng;  Shuo Zhang;  Tao Li;  Tongbo Wei;  Jianchang Yan;  Guodong Yuan;  Junxi Wang;  Jinmin Li
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Defect-free InAsSb nanowire arrays on Si substrates grown by selective-area metal– organic chemical vapor deposition 期刊论文
Nanotechnology, 2018, 卷号: 29, 页码: 405601 (6pp)
Authors:  Xiaoguang Yang ;  Wenna Du;  Xianghai Ji ;   Xingwang Zhang;  Tao Yang
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Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate 期刊论文
NANOTECHNOLOGY, 2018, 卷号: 29, 期号: 41, 页码: 415203
Authors:  Wenyuan Yang ;   Dong Pan ;   Rui Shen ;   Xinzhe Wang ;   Jianhua Zhao ;   Qing Chen
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Fano resonances in bilayer phosphorene nanoring 期刊论文
Nanotechnology, 2018, 卷号: 29, 页码: 215202
Authors:  Rui Zhang ;   Zhenhua Wu ;   X J Li ;   L L Li ;   Qiao Chen ;   Yun-Mei Li ;   F M Peeters
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Insight into the Influence of Cl Incorporation intoLead-Halide Perovskite Materials A Review 期刊论文
Journal of Nanoscience and Nanotechnology, 2018, 卷号: 18, 期号: 11, 页码: 7335–7348
Authors:  Muhammad Azam ;   Shizhong Yue ;   Kong Liu ;   Yang Sun ;   Jun Liu ;   Kuankuan Ren ;   Zhijie Wang ;   Shengchun Qu ;   Zhanguo Wang
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Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer 期刊论文
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189
Authors:  Meilan Hao ;   Quan Wang ;   Lijuan Jiang ;   Chun Feng ;   Changxi Chen ;   Cuimei Wang ;   Hongling Xiao ;   Fengqi Liu ;   Xiangang Xu ;   Xiaoliang Wang ;   Zhanguo Wang
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The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7484-7488
Authors:  Li Fangzheng;  Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Chen Yanan;  Yang Shaoyan;  Jin Peng;  Wang Zhanguo
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Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7446-7450
Authors:  Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
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Angular Dependence of the Spin Photocurrent in a Spin Light Emitting Diode 期刊论文
Journal of Nanoscience and Nanotechnology, 2018, 卷号: 18, 页码: 7573–7577
Authors:  Xiaodi Xue ;   Wei Huang ;   Laipan Zhu ;   Yang Zhang ;   Yuan Lu , Yu Liu ;   Yonghai Chen ;   Zhanguo Wang
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The Mapping of Spin Photocurrent in In 0?15 Ga 0?85 As/Al 0?3 Ga 0?7 As Multiple Quantum Wells 期刊论文
Journal of Nanoscience and Nanotechnology, 2018, 卷号: 18, 期号: 11, 页码: 7613–7616
Authors:  Yang Zhang;   Yu Liu ;   Wei Huang;   Xiao-Di Xue;   Yong-Hai Chen ;   Zhan-Guo Wang
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