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Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence 期刊论文
Nanotechnology, 2019, 卷号: 30, 期号: 4, 页码: 045604
Authors:  Shaoteng Wu;  Liancheng Wang;  Zhiqiang Liu;  Xiaoyan Yi;  Yunyu Wang;  Cheng Cheng;  Chen Lin;  Tao Feng;  Shuo Zhang;  Tao Li;  Tongbo Wei;  Jianchang Yan;  Guodong Yuan;  Junxi Wang;  Jinmin Li
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Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy 期刊论文
Nanotechnology, 2019, 卷号: 31, 期号: 15, 页码: 1-10
Authors:  Lianjun Wen;  Dong Pan;  Dunyuan Liao;  Jianhua Zhao
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Crossover from Coulomb blockade to ballistic transport in InAs nanowire devices 期刊论文
Nanotechnology, 2019, 卷号: 30, 页码: 124001
Authors:  L B Wang ;   Dong Pan ;   G Y Huang ;   Jianhua Zhao ;   N Kang ;   H Q Xu
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Growth of two-dimensional materials on hexagonal boron nitride (h-BN) 期刊论文
Nanotechnology, 2019, 卷号: 30, 页码: 034003
Authors:  Xinsheng Wang ;   Mongur Hossain ;   Zhongming Wei ;   Liming Xie
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The optimization of optical modes in Ni-BiVO 4 nanoarrays for boosting photoelectrochemical water splitting 期刊论文
Nanotechnology, 2019, 卷号: 30, 页码: 445403
Authors:  Minyang Lei ;   Jun Liu ;   Yanbin Huang ;   Yulian Dong ;   Siyu Zhou ;   Huaping Zhao ;   Zhijie Wang;   Minghong Wu;   Yong Lei ;   Zhanguo Wang
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Photo-excited carrier relaxation dynamics in two-dimensional InSe flakes 期刊论文
Nanotechnology, 2019, 卷号: 31, 期号: 9, 页码: 095713
Authors:  Ying Li;   Jialiang Ye;   Kai Yuan;   Guihao Zhai;   Ting Li;   Yu Ye;   Xiaoguang Wu ;   Xinhui Zhang
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Recent progress in synthesis, properties, and applications of hexagonal boron nitride- based heterostructures 期刊论文
Nanotechnology, 2019, 卷号: 30, 期号: 7, 页码: 074003
Authors:  Junhua Meng ;   Denggui Wang;   Likun Cheng;   Menglei Gao ;   Xingwang Zhang
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Defect-free InAsSb nanowire arrays on Si substrates grown by selective-area metal– organic chemical vapor deposition 期刊论文
Nanotechnology, 2018, 卷号: 29, 页码: 405601 (6pp)
Authors:  Xiaoguang Yang ;  Wenna Du;  Xianghai Ji ;   Xingwang Zhang;  Tao Yang
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Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate 期刊论文
NANOTECHNOLOGY, 2018, 卷号: 29, 期号: 41, 页码: 415203
Authors:  Wenyuan Yang ;   Dong Pan ;   Rui Shen ;   Xinzhe Wang ;   Jianhua Zhao ;   Qing Chen
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Fano resonances in bilayer phosphorene nanoring 期刊论文
Nanotechnology, 2018, 卷号: 29, 页码: 215202
Authors:  Rui Zhang ;   Zhenhua Wu ;   X J Li ;   L L Li ;   Qiao Chen ;   Yun-Mei Li ;   F M Peeters
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