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Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence
Shaoteng Wu;  Liancheng Wang;  Zhiqiang Liu;  Xiaoyan Yi;  Yunyu Wang;  Cheng Cheng;  Chen Lin;  Tao Feng;  Shuo Zhang;  Tao Li;  Tongbo Wei;  Jianchang Yan;  Guodong Yuan;  Junxi Wang;  Jinmin Li
2019
Source PublicationNanotechnology
Volume30Issue:4Pages:045604
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29372
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Shaoteng Wu;Liancheng Wang;Zhiqiang Liu;Xiaoyan Yi;Yunyu Wang;Cheng Cheng;Chen Lin;Tao Feng;Shuo Zhang;Tao Li;Tongbo Wei;Jianchang Yan;Guodong Yuan;Junxi Wang;Jinmin Li. Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence[J]. Nanotechnology,2019,30(4):045604.
APA Shaoteng Wu;Liancheng Wang;Zhiqiang Liu;Xiaoyan Yi;Yunyu Wang;Cheng Cheng;Chen Lin;Tao Feng;Shuo Zhang;Tao Li;Tongbo Wei;Jianchang Yan;Guodong Yuan;Junxi Wang;Jinmin Li.(2019).Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence.Nanotechnology,30(4),045604.
MLA Shaoteng Wu;Liancheng Wang;Zhiqiang Liu;Xiaoyan Yi;Yunyu Wang;Cheng Cheng;Chen Lin;Tao Feng;Shuo Zhang;Tao Li;Tongbo Wei;Jianchang Yan;Guodong Yuan;Junxi Wang;Jinmin Li."Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence".Nanotechnology 30.4(2019):045604.
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伍绍腾Horizontal GaN na(1757KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
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