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Multiscale simulation of lateral charge loss in Si 3 N 4 3D NAND flash based on density functional theory 期刊论文
Journal of Physics D: Applied Physics, 2019, 卷号: 52, 页码: 395103
Authors:  Jixuan Wu ;   Jiezhi Chen ;   Xiangwei Jiang
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Defects coupling impacts on mono-layer WSe 2 tunneling field-effect transistors 期刊论文
Applied Physics Express, 2019, 卷号: 12, 页码: 034001
Authors:  Jixuan Wu ;   Xiaolei Ma ;   Jiezhi Chen ;   Xiangwei Jiang
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Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory 期刊论文
IEEE Journal of the Electron Devices Society, 2019, 卷号: 7, 页码: 626-631
Authors:  JIXUAN WU;   JIEZHI CHEN (Senior Member, IEEE);   XIANGWEI JIANG(Member, IEEE)
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Atomic defects in monolayer WSe 2 tunneling FETs studied by systematic ab initio calculations 期刊论文
APPLIED PHYSICS EXPRESS, 2018, 卷号: 11, 期号: 5, 页码: 054001
Authors:  Jixuan Wu ;  Zhiqiang Fan ;   Jiezhi Chen;   Xiangwei Jiang
Adobe PDF(1027Kb)  |  Favorite  |  View/Download:49/0  |  Submit date:2019/11/18
Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions 期刊论文
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 33, 页码: 335104
Authors:  Zhi-Qiang Fan;  Jiezhi Chen;  Xiangwei Jiang
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Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors 期刊论文
ACS Applied Materials & Interfaces, 2018, 卷号: 10, 期号: 22, 页码: 19271-19277
Authors:  Zhi-Qiang Fan;   Xiang-Wei Jiang;  Jiezhi Chen;   Jun-Wei Luo
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