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Atomic defects in monolayer WSe 2 tunneling FETs studied by systematic ab initio calculations 期刊论文
APPLIED PHYSICS EXPRESS, 2018, 卷号: 11, 期号: 5, 页码: 054001
Authors:  Jixuan Wu ;  Zhiqiang Fan ;   Jiezhi Chen;   Xiangwei Jiang
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Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions 期刊论文
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 33, 页码: 335104
Authors:  Zhi-Qiang Fan;  Jiezhi Chen;  Xiangwei Jiang
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Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors 期刊论文
ACS Applied Materials & Interfaces, 2018, 卷号: 10, 期号: 22, 页码: 19271-19277
Authors:  Zhi-Qiang Fan;   Xiang-Wei Jiang;  Jiezhi Chen;   Jun-Wei Luo
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