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Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET 期刊论文
IEEE Electron Device Letters, 2019, 卷号: 40, 期号: 5, 页码: 698-701
Authors:  Weijiang Ni ;   Xiaoliang Wang ;   Miaolin Xu;   Quan Wang ;   Chun Feng;   Honglin Xiao;   Lijuan Jiang;   Wei Li
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Long wavelength type II InAs/GaSb superlattice photodetector using resonant tunneling diode structure 期刊论文
IEEE Electron Device Letters, 2019, 卷号: 41, 期号: 1, 页码: 73-75
Authors:  Biying Nie;   Jianliang Huang;   Chengcheng Zhao;   Yanhua Zhang;   Wenquan Ma
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Nanoelectromechanical Switches by Controlled Switchable Cracking 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 7, 页码: 1209-1212
Authors:  Qiang Luo;   Zhe Guo;   Houbing Huang;   Qiming Zou ;   Xiangwei Jiang ;   Shuai Zhang;   Hongjuan Wang ;  Min Song;   Bao Zhang;   Hong Chen;   Haoshuang Gu;   Genquan Han ;   Xiaofei Yang;   Xuecheng Zou ;  Kai-You Wang;   Zhiqi Liu;   Jeongmin Hong ;   Ramamoorthy Ramesh;   Long You
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Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque 期刊论文
IEEE Electron Device Letters, 2019, 卷号: 40, 期号: 9, 页码: 1554-1557
Authors:  Meiyin Yang;  Yongcheng Deng;  Zhenhua Wu;  Kaiming Cai;  Kevin William Edmonds;  Yucai Li;  Yu Sheng;  Sumei Wang;  Yan Cui;  Jun Luo;  Yang Ji;  Hou-Zhi Zheng;  Kaiyou Wang
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Nanoelectromechanical Switches by Controlled Switchable Cracking 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 7, 页码: 1209-1212
Authors:  Qiang Luo;   Zhe Guo;   Houbing Huang;   Qiming Zou ;   Xiangwei Jiang ;   Shuai Zhang;   Hongjuan Wang ;  Min Song;   Bao Zhang;   Hong Chen;   Haoshuang Gu;   Genquan Han ;   Xiaofei Yang;   Xuecheng Zou ;  Kai-You Wang;   Zhiqi Liu;   Jeongmin Hong ;   Ramamoorthy Ramesh;   Long You
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Color Converted White Light-Emitting Diodes With 637.6 MHz Modulation Bandwidth 期刊论文
IEEE Electron Device Letters, 2019, 卷号: 40, 期号: 2, 页码: 267-270
Authors:  Haicheng Cao ;   Shan Lin ;   Zhanhong Ma;   Xiaodong Li;   Jing Li;   Lixia Zhao
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Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 3, 页码: 444-447
Authors:  Hongjuan Wang;   Xiangwei Jiang ;   Member, IEEE ;   Nuo Xu;   Member, IEEE ;   Genquan Han ;   Member, IEEE ;   Yue Hao;   Senior Member, IEEE ;   Shu-Shen Li;   David Esseni;   Fellow, IEEE
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Two-Color niBin Type II Superlattice Infrared Photodetector With External Quantum Efficiency Larger Than 100% 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 页码: 1266-1269
Authors:  Jianliang Huang;  Wenquan Ma;  Yanhua Zhang;  Yulian Cao;  Wenjun Huang;  Chengcheng Zhao
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A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 期号: 7, 页码: 941-944
Authors:  Zhengxin Wen;  Feng Zhang;  Member;  IEEE;  Zhanwei Shen;  Lixin Tian;  Guoguo Yan;  Xingfang Liu;  Lei Wang;  Wanshun Zhao;  Guosheng Sun;  Yiping Zeng
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Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers 期刊论文
IEEE Electron Device Letters, 2016, 卷号: 37, 期号: 9, 页码: 1166 - 1169
Authors:  Yanhua Zhang;  Wenquan Ma;  Jianliang Huang;  Yulian Cao;  Ke Liu;  Wenjun Huang;  Chengcheng Zhao;  Haiming Ji;  Tao Yang
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