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Cesium Lead Inorganic Solar Cell with Efficiency beyond 18% via Reduced Charge Recombination 期刊论文
Advanced Materials, 2019, 页码: 1905143
Authors:  Qiufeng Ye;  Yang Zhao;  Shaiqiang Mu;  Fei Ma;  Feng Gao;  Zema Chu;  Zhigang Yin;  Pingqi Gao;  Xingwang Zhang;  Jingbi You
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High-Brightness Low-Divergence Tapered Lasers with a Narrow Taper Angle 期刊论文
Chinese Physics Letters, 2019, 卷号: 36, 期号: 8, 页码: 084201
Authors:  Zhong-Hao Chen ;   Hong-Wei Qu ;   Xiao-Long Ma ;   Ai-Yi Qi ;  Xu-Yan Zhou ;   Yu-Fei Wang ;   Wan-Hua Zheng
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High Coupling Efficiency of the Fiber-Coupled Module Based on Photonic-Band-Crystal Laser Diodes 期刊论文
CHIN. PHYS. LETT., 2017, 卷号: 34, 期号: 7, 页码: 074205
Authors:  Yang Chen;  Yu-Fei Wang;  Hong-Wei Qu;  Yu-Fang Zhang;  Yun Liu;  Xiao-Long Ma;  Xiao-Jie Guo;  Peng-Chao Zhao;  Wan-Hua Zheng
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Modulation of Fermi velocities of Dirac electrons in single layer graphene by moire superlattice 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 103, 期号: 11, 页码: 113106 - 113106-5
Authors:  Zou, Q;  Belle, BD;  Zhang, LZ;  Xiao, WD;  Yang, K;  Liu, LW;  Wang, GQ;  Fei, XM;  Huang, Y;  Ma, RS;  Lu, Y;  Tan, PH;  Guo, HM;  Du, SX;  Gao, HJ
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The Research Progress of Quantum Dot Lasers and Photodetectors in China 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 卷号: 11, 期号: 11 S1, 页码: 9345-9356
Authors:  Xu PF (Xu Peng-Fei);  Ji HM (Ji Hai-Ming);  Yang T (Yang Tao);  Xu B (Xu Bo);  Ma WQ (Ma Wen-Quan);  Wang ZG (Wang Zhanguo)
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Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 1, 页码: Art. No. 013102
Authors:  Xu PF (Xu Peng-Fei);  Yang T (Yang Tao);  Ji HM (Ji Hai-Ming);  Cao YL (Cao Yu-Lian);  Gu;  YX (Gu Yong-Xian);  Liu Y (Liu Yu);  Ma WQ (Ma Wen-Quan);  Wang ZG (Wang Zhan-Guo);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: tyang@semi.ac.cn
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Energy States  Optical Modulation  Quantum Dot Lasers  Threshold Current  Well  Gain  
High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 2, 页码: Art. No. 027801
Authors:  Ji HM (Ji Hai-Ming);  Yang T (Yang Tao);  Cao YL (Cao Yu-Lian);  Xu PF (Xu Peng-Fei);  Gu YX (Gu Yong-Xian);  Ma;  WQ (Ma Wen-Quan);  Wang ZG (Wang Zhan-Guo);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: tyang@semi.ac.cn
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Threshold Current  Room-temperature  Dependence  Photoluminescence  
Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 17, 页码: Art. No. 171101
Authors:  Cao YL (Cao Yu-Lian);  Yang T (Yang Tao);  Xu PF (Xu Peng-Fei);  Ji HM (Ji Hai-Ming);  Gu YX (Gu Yong-Xian);  Wang XD (Wang Xiao-Dong);  Wang Q (Wang Qing);  Ma WQ (Ma Wen-Quan);  Chen LH (Chen Liang-Hui);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: tyang@semi.ac.cn
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Excited States  Gallium Arsenide  Iii-v Semiconductors  Indium Compounds  Laser Tuning  Optical Films  Quantum Dot Lasers  Silicon Compounds  Tantalum Compounds  Temperature-dependence  Threshold  Performance  Gain  
提高二极管激光阵列外腔锁相效率的实验研究 期刊论文
激光与红外, 2009, 卷号: 39, 期号: 8, 页码: 855-857
Authors:  张雪;  赵鹏飞;  李强;  刘波;  马建军
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Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 3, 页码: 822-824
Authors:  Wei TB (Wei Tong-Bo);  Ma P (Ma Ping);  Duan RF (Duan Rui-Fei);  Wang JX (Wang Jun-Xi);  Li JM (Li Jin-Min);  Zeng YP (Zeng Yi-Ping);  Wei, TB, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: tbwei@semi.ac.cn
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Vapor-phase Epitaxy