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Temperature dependent direct-bandgap light emission and optical gain of Ge 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 5, 页码: 057804
Authors:  Zhi Liu;  Chao He;  Dongliang Zhang;  Chuanbo Li;  Chunlai Xue;  Yuhua Zuo;  Buwen Cheng
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锗锡材料特性以及相关光电子器件研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  张东亮
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锗锡  硅基光电子  探测器  近红外  双异质结激光器  
Influence of growth and annealing temperature on the strain and surface morphology of Ge995Sn0.005 epilayer 期刊论文
Applied Surface Science, 2015, 卷号: 340, 页码: 132-137.
Authors:  Su Shaojian;  Zhang Dongliang;  Xue Chunlai;  Cheng Buwen
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Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn 期刊论文
Solid-State Electronics, 2015, 卷号: 114, 页码: 178–181
Authors:  Xu Zhang;  Dongliang Zhang;  Jun Zheng;  Zhi Liu;  Chao He;  Chunlai Xue;  Guangze Zhang;  Chuanbo Li;  Buwen Cheng;  Qiming Wang
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Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy 期刊论文
Journal of Physical Chemistry C, 2015, 卷号: 119, 页码: 17842−17847
Authors:  Dalin Zhang;  Zhi Liu;  Dongliang Zhang;  Xu Zhang;  Junying Zhang;  Jun Zheng;  Yuhua Zuo;  Chunlai Xue;  Chuanbo Li;  Shunri Oda;  Buwen Cheng;  Qiming Wang
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High-responsivity GeSn short-wave infrared p-i-n photodetectors 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 14, 页码: 141111
Authors:  Zhang, Dongliang;  Xue, Chunlai;  Cheng, Buwen;  Su, Shaojian;  Liu, Zhi;  Zhang, Xu;  Zhang, Guangze;  Li, Chuanbo;  Wang, Qiming
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Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 3, 页码: 339-341
Authors:  Gong, Xiao;  Han, Genquan;  Bai, Fan;  Su, Shaojian;  Guo, Pengfei;  Yang, Yue;  Cheng, Ran;  Zhang, Dongliang;  Zhang, Guangze;  Xue, Chunlai;  Cheng, Buwen;  Pan, Jisheng;  Zhang, Zheng;  Tok, Eng Soon;  Antoniadis, Dimitri;  Yeo, Yee-Chia
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大失配体系硅基无位错异质外延方法 专利
专利类型: 发明, 公开日期: 2016-08-30
Inventors:  张大林;  李传波;  刘智;  张东亮;  成步文;  王启明
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