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| Direct Wide Bandgap 2D GeSe 2 Monolayer toward Anisotropic UV Photodetection 期刊论文 Advanced Optical Materials, 2019, 卷号: 7, 期号: 19, 页码: 1900622 Authors: Yong Yan; Wenqi Xiong; Shasha Li; Kai Zhao; Xiaoting Wang; Jian Su; Xiaohui Song; Xueping Li; Shuai Zhang; Huai Yang; Xinfeng Liu; Lang Jiang; Tianyou Zhai; Congxin Xia; Jingbo Li; Zhongming Wei
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| Perseverance of direct bandgap in multilayer 2D PbI 2 under an experimental strain up to 7.69% 期刊论文 2D Materials, 2019, 卷号: 6, 期号: 2, 页码: 025014 Authors: Lena Du ; Cong Wang ; Wenqi Xiong ; Shuai Zhang ; Congxin Xia ; Zhongming Wei ; Jingbo Li ; Sefaattin Tongay ; Fengyou Yang ; Xinzheng Zhang ; Xinfeng Liu ; Qian Liu
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| Realization of larger band gap opening of graphene and type-I band alignment with BN intercalation layer in graphene/MX 2 heterojunctions 期刊论文 PHYSICAL REVIEW B, 2019, 卷号: 100, 页码: 115439 Authors: Qiang Gao ; Xueping Li ; Meng Li ; Tianxing Wang ; Xiaowei Huang ; Qiming Zhang ; Jingbo Li ; Yu Jia ; Congxin Xia
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| Elastic, electronic and optical properties of the two-dimensional PtX 2 (X = S, Se, and Te) monolayer 期刊论文 Applied Surface Science, 2018, 卷号: 435, 页码: 476-482 Authors: Juan Du ; Peng Song ; Lizhen Fang ; Tianxing Wang ; Zhongming Wei ; Jingbo Li ; Congxin Xia
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| Robust electronic and mechanical properties to layer number in 2D wide-gap X(OH) 2 (X = Mg, Ca) 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 卷号: 51, 期号: 1, 页码: 015107 Authors: Congxin Xia; Wenqi Xiong; Juan Du; Tianxing Wang; Zhongming Wei; Jingbo Li
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| Type-II InSe/MoSe 2 (WSe 2 ) van der Waals heterostructures: vertical strain and electric field effects 期刊论文 Journal of Materials Chemistry, 2018, 卷号: 6, 期号: 37, 页码: 10010-10019 Authors: Xueping Li; Guangrui Jia; Juan Du; Xiaohui Song; Congxin Xia; Zhongming Wei ; Jingbo Li
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| Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects 期刊论文 Small, 2018, 卷号: 14, 页码: 1800365 Authors: Congxin Xia; Wenqi Xiong; Juan Du; Tianxing Wang; Yuting Peng; Zhongming Wei; Jingbo Li; Yu Jia
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| Out of plane stacking of InSe-based heterostructures towards high performance electronic and optoelectronic devices using a graphene electrode 期刊论文 JOURNAL OF MATERIALS CHEMISTRY C, 2018, 卷号: 6, 期号: 46, 页码: 12433–12760 Authors: Gao Wei; Zheng Zhaoqiang; Li Yongtao; Xia Congxin; Du Juan; Zhao Yu; Li Jingbo
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| Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions 期刊论文 Physical Review Applied, 2018, 卷号: 10, 期号: 5, 页码: 054064 Authors: Congxin Xia; Juan Du; Meng Li; Xueping Li; Xu Zhao; Tianxing Wang; Jingbo Li
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| Enhanced Carrier Concentration and Electronic Transport by Inserting Graphene into van der Waals Heterostructures of Transition-Metal Dichalcogenides 期刊论文 Physical Review Applied, 2018, 卷号: 10, 期号: 2, 页码: 024028 Authors: Congxin Xia; Wenqi Xiong; Wenbo Xiao; Juan Du; Lizhen Fang; Jingbo Li; Yu Jia
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