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Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028101
Authors:  Jing Zhang ;   Hongliang Lv ;   Haiqiao Ni ;   Shizheng Yang ;   Xiaoran Cui ;   Zhichuan Niu ;   Yimen Zhang ;   Yuming Zhang
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6H-SiC MOS结构电特性及其辐照效应的研究 期刊论文
电子与信息学报, 2003, 卷号: 25, 期号: 3, 页码: 389-394
Authors:  尚也淳;  张义门;  张玉明;  刘忠立
Adobe PDF(271Kb)  |  Favorite  |  View/Download:635/215  |  Submit date:2010/11/23