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Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
OPTICAL MATERIALS, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Authors:  Wu JJ (Wu Jiejun);  Han XX (Han Xiuxun);  Li JM (Li Jiemin);  Wei HY (Wei Hongyuan);  Cong GW (Cong Guangwei);  Liu XL (Liu Xianglin);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Jia QJ (Jia Quanjie);  Guo LP (Guo Liping);  Hu TD (Hu Tiandou);  Wang HH (Wang Huanhua);  Wu, JJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: jiejunw@red.semi.ac.cn
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In dopIng  Cracks  Si(111) Substrate  Lt-algan Interlayer  Metalorganic Chemical Vapor Deposition  Gan  Phase Epitaxy  Indium-surfactant  Optical-properties  Si(111)  Stress  Films  
掺Er凝胶玻璃中Er离子发光性质的研究 期刊论文
光谱学与光谱分析, 1998, 卷号: 18, 期号: 2, 页码: 177
Authors:  谢大;  吴瑾光;  徐端夫;  胡天斗;  周维金;  徐光宪;  王启明;  杨沁清;  雷宏兵
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MBE高掺杂n-GaAs:Si和p-GaAs:Be的光致发光谱 期刊论文
半导体学报, 1989, 卷号: 10, 期号: 8, 页码: 607
Authors:  胡天斗;  许继宗;  梁基本;  庄蔚华
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MBE高掺Be p-GaAs中Eg+△0等高于带边的发光 期刊论文
半导体学报, 1989, 卷号: 10, 期号: 3, 页码: 222
Authors:  胡天斗;  许继宗;  梁基本;  庄蔚华
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MBE生长GaAs的光荧及高掺杂引起的带隙收缩 学位论文
, 北京: 中国科学院半导体研究所, 1987
Authors:  胡天斗
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