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准量子阱有源区、薄层波导半导体光放大器集成模斑转换器 专利
专利类型: 发明, 申请日期: 2005-12-28, 公开日期: 2009-06-04, 2009-06-11
Inventors:  丁颖;  王圩;  王书学;  朱洪亮
Adobe PDF(596Kb)  |  Favorite  |  View/Download:817/181  |  Submit date:2009/06/11