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Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing 期刊论文
Hu, Shaoxu ; Han, Peide ; Wang, Shuai ; Mao, Xue ; Li, Xinyi ; Gao, Lipeng, 2012, 卷号: 209, 期号: 12, 页码: 2521-2526
Authors:  Hu, Shaoxu;  Han, Peide;  Wang, Shuai;  Mao, Xue;  Li, Xinyi;  Gao, Lipeng
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Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing 期刊论文
Physica Status Solidi (A) Applications and Materials Science, 2012, 卷号: 209, 期号: 12, 页码: 2521-2526
Authors:  Hu, Shaoxu;  Han, Peide;  Wang, Shuai;  Mao, Xue;  Li, Xinyi;  Gao, Lipeng
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硫系元素过饱和掺杂硅材料及其器件制备中的关键技术研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  李辛毅
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Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 10, 页码: 102002
Authors:  Hu SX (Hu, Shaoxu);  Han PD (Han, Peide);  Wang S (Wang, Shuai);  Mao X (Mao, Xue);  Li XY (Li, Xinyi);  Gao LP (Gao, Lipeng)
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Electronic properties investigation of silicon supersaturated with tellurium 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 105, 期号: 4, 页码: 1021-1024
Authors:  Li XY (Li Xinyi);  Han PD (Han Peide);  Gao LP (Gao Lipeng);  Mao X (Mao Xue);  Hu SX (Hu Shaoxu)
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Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 6, 页码: Art.No.062106
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Yang H;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Chemical-vapor-deposition  
Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 289, 期号: 1, 页码: 72-75
Authors:  Zhao DG;  Zhu JJ;  Jiang DS;  Yang H;  Liang JW;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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Growth Rate  Parasitic Reaction  Mocvd  Aln  Gas-phase Reactions  Movpe Growth  Algan Movpe  Alxga1-xn  
Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 24, 页码: Art.No.241917
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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Chemical-vapor-deposition  Molecular-beam Epitaxy  X-ray-diffraction  Mg-doped Gan  Undoped Gan  Photoluminescence Bands  Threading Dislocations  Positron-annihilation  Growth Stoichiometry  Gallium Nitride  
一种基于黑硅材料非制冷热红外探测器的制备方法 专利
专利类型: 发明, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  韩培德;  李辛毅;  毛雪;  胡少旭;  王帅;  范玉杰
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一种非制冷热电偶红外探测器及其制备方法 专利
专利类型: 发明, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  李辛毅;  韩培德;  毛雪;  胡少旭;  王帅;  范玉杰
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