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Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
SOLID-STATE ELECTRONICS, 2013, 卷号: 83, 页码: 66-70
Authors:  Wang, Lanxiang;  Su, Shaojian;  Wang, Wei;  Gong, Xiao;  Yang, Yue;  Guo, Pengfei;  Zhang, Guangze;  Xue, Chunlai;  Cheng, Buwen;  Han, Genquan;  Yeo, Yee-Chia
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High-responsivity GeSn short-wave infrared p-i-n photodetectors 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 14, 页码: 141111
Authors:  Zhang, Dongliang;  Xue, Chunlai;  Cheng, Buwen;  Su, Shaojian;  Liu, Zhi;  Zhang, Xu;  Zhang, Guangze;  Li, Chuanbo;  Wang, Qiming
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Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 3, 页码: 339-341
Authors:  Gong, Xiao;  Han, Genquan;  Bai, Fan;  Su, Shaojian;  Guo, Pengfei;  Yang, Yue;  Cheng, Ran;  Zhang, Dongliang;  Zhang, Guangze;  Xue, Chunlai;  Cheng, Buwen;  Pan, Jisheng;  Zhang, Zheng;  Tok, Eng Soon;  Antoniadis, Dimitri;  Yeo, Yee-Chia
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GeSn合金的晶格常数对Vegard定律的偏离 期刊论文
物理学报, 2012, 卷号: 61, 期号: 17, 页码: 176104-1-176104-5
Authors:  苏少坚,成步文,薛春来,张东亮,张广泽,王启明
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Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2012, 卷号: 33, 期号: 11, 页码: 1529-1531
Authors:  Wang LX (Wang, Lanxiang);  Su SJ (Su, Shaojian);  Wang W (Wang, Wei);  Yang Y (Yang, Yue);  Tong Y (Tong, Yi);  Liu B (Liu, Bin);  Guo PF (Guo, Pengfei);  Gong X (Gong, Xiao);  Zhang GZ (Zhang, Guangze);  Xue CL (Xue, Chunlai);  Cheng BW (Cheng, Buwen);  Han GQ (Han, Genquan);  Yeo YC (Yeo, Yee-Chia)
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Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer 期刊论文
Digest of Technical Papers - Symposium on VLSI Technology, 2012, 页码: 97-98
Authors:  Han, Genquan;  Su, Shaojian;  Wang, Lanxiang;  Zhang, Zheng;  Xue, Chunlai;  Cheng, Buwen;  Yeo, Yee-Chia;  Wang, Wei;  Gong, Xiao;  Yang, Yue;  Ivana;  Guo, Pengfei;  Guo, Cheng;  Zhang, Guangze;  Pan, Jisheng
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Si(001)衬底上分子束外延生长Ge_(0.975)Sn_(0.025)合金薄膜 期刊论文
物理学报, 2011, 卷号: 60, 期号: 2, 页码: 028101-1-028101-5
Authors:  苏少坚;  汪巍;  张广泽;  胡炜玄;  白安琪;  薛春来;  左玉华;  成步文;  王启明
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外延生长Gel-xSnx合金的研究进展 期刊论文
材料导报, 2010, 卷号: 24, 期号: 11上, 页码: 90-93,117
Authors:  苏少坚;  汪巍;  胡炜玄;  张广泽;  薛春来;  左玉华;  成步文;  王启明
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60%电光效率高功率激光二极管阵列 期刊论文
中国激光, 2008, 卷号: 35, 期号: 9, 页码: 1323-1327
Authors:  王俊;  白一鸣;  崇锋;  刘媛媛;  冯小明;  王勇刚;  张广泽;  刘素平;  马骁宇
Adobe PDF(455Kb)  |  Favorite  |  View/Download:1096/356  |  Submit date:2010/11/23
Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition 期刊论文
Semiconductor Photonics and Technology, 2007, 卷号: 13, 期号: 3, 页码: 215-217
Authors:  LIN Tao;  CAI Daomin;  LI Xianjie;  JIANG Li;  ZHANG Guangze
Adobe PDF(240Kb)  |  Favorite  |  View/Download:793/278  |  Submit date:2010/11/23