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Ge组分对SiGe HBT直流特性的影响 期刊论文
固体电子学研究与进展, 2008, 卷号: 28, 期号: 4, 页码: 479-482
Authors:  张永;  李成;  赖虹凯;  陈松岩;  康俊勇;  成步文;  王启明
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Defect influence on luminescence efficiency of GaN-based LEDs 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 卷号: 9, 期号: 1-3, 页码: 371-374
Authors:  Li SP (Li Shuping);  Fang ZL (Fang Zhilai);  Chen HY (Chen Hangyang);  Li JC (Li Jinchai);  Chen XH (Chen Xiaohong);  Yuan XL (Yuan Xiaoli);  Sekiguchi T (Sekiguchi Takashi);  Wang QM (Wang Qiming);  Kang JY (Kang Junyong);  Kang, JY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. E-mail: jykang@xmu.edu.cn
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Defects  Gan  Luminescence Efficiency  Led  
Defect influence on luminescence efficiency of GaN-based LEDs 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
Authors:  Li SP (Li Shuping);  Fang ZL (Fang Zhilai);  Chen HY (Chen Hangyang);  Li JC (Li Jinchai);  Chen XH (Chen Xiaohong);  Yuan XL (Yuan Xiaoli);  Sekiguchi T (Sekiguchi Takashi);  Wang QM (Wang Qiming);  Kang JY (Kang Junyong);  Kang, JY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. 电子邮箱地址: jykang@xmu.edu.cn
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Defects