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Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
Authors:  Chen Z;  Chua SJ;  Yuan HR;  Liu XL;  Lu DC;  Han PD;  Wang ZG;  Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg
Adobe PDF(225Kb)  |  Favorite  |  View/Download:1126/329  |  Submit date:2010/10/29
Metalorganic Chemical Vapor Deposition  Semiconducting Iii-v Materials  Doped Al(x)Ga1-xn/gan Heterostructures  Carrier Confinement  Effect Transistors  Photoluminescence  Mobility  Heterojunction  Interface  Hfets  
The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells 期刊论文
JOURNAL OF LUMINESCENCE, 2002, 卷号: 99, 期号: 1, 页码: 35-38
Authors:  Chen Z;  Lu DC;  Wang XH;  Liu XL;  Yuan HR;  Han PD;  Wang D;  Wang ZG;  Li GH;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(93Kb)  |  Favorite  |  View/Download:1232/566  |  Submit date:2010/08/12
Photoluminescence  Excitation Transfer Mechanism  Gan  Ingan  Mocvd  Ingan Single  Emission  Polarization  
Indium doping effect on GaN in the initial growth stage 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2001, 卷号: 30, 期号: 8, 页码: 977-979
Authors:  Yuan HR;  Lu DC;  Liu XL;  Chen Z;  Wang XH;  Wang D;  Han PD;  Yuan HR,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(209Kb)  |  Favorite  |  View/Download:933/327  |  Submit date:2010/08/12
Gan  Indium Doping  Initial Growth Stage  Morphology  Optical Transmission  Photoluminescence  Vapor-phase Epitaxy  Buffer Layer  Films  Sapphire  Deposition