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Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 5, 页码: Art. No. 055310
Authors:  Liang S;  Zhu HL;  Ye XL;  Pan JQ;  Zhao LJ;  Wang W;  Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
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Chemical-vapor-deposition  Multiatomic Steps  Islands  Growth  Fabrication  Epitaxy  
Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 期刊论文
NANOTECHNOLOGY, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211
Authors:  Chen YH;  Jin P;  Liang LY;  Ye XL;  Wang ZG;  Martinez AI;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Scanning-tunneling-microscopy  Anisotropy Spectroscopy  Growth  Gaas  Surfaces  Alas  
Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 6, 页码: Art.No.063114
Authors:  Lei W;  Chen YH;  Jin P;  Ye XL;  Wang YL;  Xu B;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Vertical Self-organization  Quantum Wires  Surface  Growth  Alloy  Inalas/inp(001)  Nanowires  Inp(001)  Islands  Arrays  
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
Authors:  Ye XL;  Chen YH;  Xu B;  Zeng YP;  Wang ZG;  Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
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Short-period Superlattices  Raman-scattering  Quantum-wells  Growth  Roughness  Segregation  Alas/gaas  Alas  Gaas  
Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 395-400
Authors:  He J;  Xu B;  Wang ZG;  Qu SC;  Liu FQ;  Zhu TW;  Ye XL;  Zhao FA;  Meng XQ;  He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Photoluminescence  Molecular Beam Epitaxy  Nanomaterials  Quantum Dots  Semiconducting Iii-v Materials  1.3 Mu-m  Temperature-dependence  Excited-states  Inxga1-xas  Growth  Lasers  Inp  
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 92, 期号: 1, 页码: 511-514
Authors:  Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  1.3 Mu-m  Temperature-dependence  Growth  Gaas  Lasers  
Optical properties of InGaAs quantum dots formed on InAlAs wetting layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46
Authors:  Zhang YC;  Huang CJ;  Xu B;  Ye XL;  Ding D;  Wang JZ;  Li YF;  Liu F;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Nanostructures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Electron-phonon Interactions  Temperature-dependence  Semiconductor Nanocrystals  Carrier Transfer  Inas  Gaas  Lasers  Islands  Growth  Gain  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers  
Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 1, 页码: 533-536
Authors:  Sun S;  Wu J;  Liu FQ;  Zu HZ;  Chen YH;  Ye XL;  Jiang WH;  Xu B;  Wang ZG;  Sun S,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Inas Islands  Inp(001)  Growth  Gaas  Semiconductors  Thickness  Lasers  Ingaas  Size  
The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 212, 期号: 1-2, 页码: 360-363
Authors:  Sun ZZ;  Wu J;  Lin F;  Liu FQ;  Chen YH;  Ye XL;  Jiang WH;  Li YF;  Xu B;  Wang ZG;  Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Self-organized Quantum Dots  Inas/in0.53ga0.47as Multilayer  Inp Substrate  Mbe  Molecular-beam-epitaxy  Inas Islands  Growth  Matrix  Gaas