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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研... [13]
中科院半导体材料科学... [2]
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叶小玲 [15]
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Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:
Zhou XL
;
Chen YH
;
Zhang HY
;
Zhou GY
;
Li TF
;
Liu JQ
;
Ye XL
;
Xu B
;
Wang ZG
;
Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
Adobe PDF(1941Kb)
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View/Download:1605/395
  |  
Submit date:2011/07/05
Inas Islands
Mu-m
Escape
Gaas
Gaas(100)
Substrate
Different growth mechanisms of bimodal In As/GaAs QDs
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 卷号: 43, 期号: 1, 页码: 308-311
Authors:
Zhou GY
;
Chen YH
;
Zhou XL
;
Xu B
;
Ye XL
;
Wang ZG
;
Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
Adobe PDF(398Kb)
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View/Download:1169/353
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Submit date:2011/07/05
Inas Quantum Dots
Gaas(001)
Relaxation
Transition
Gaas
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer
期刊论文
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 卷号: 153, 期号: 7, 页码: G703-G706
Authors:
Sun J
;
Jin P
;
Zhao C
;
Yu LK
;
Ye XL
;
Xu B
;
Chen YH
;
Wang ZG
;
Sun, J, Lund Univ, SE-22100 Lund, Sweden. E-mail: albertjefferson@sohu.com
Adobe PDF(183Kb)
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View/Download:1253/444
  |  
Submit date:2010/04/11
Gaas
Spectroscopy
Parameters
Transport
Lasers
Energy
States
Hole
Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy
期刊论文
NANOTECHNOLOGY, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211
Authors:
Chen YH
;
Jin P
;
Liang LY
;
Ye XL
;
Wang ZG
;
Martinez AI
;
Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
Adobe PDF(729Kb)
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View/Download:928/246
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Submit date:2010/04/11
Scanning-tunneling-microscopy
Anisotropy Spectroscopy
Growth
Gaas
Surfaces
Alas
Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy
期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 12, 页码: 2775-2778
Authors:
Jin P
;
Ye XL
;
Wang ZG
;
Jin, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: penjin@red.semi.ac.cn
Adobe PDF(291Kb)
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View/Download:730/208
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Submit date:2010/04/11
Gaas
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
Authors:
Ye XL
;
Chen YH
;
Xu B
;
Zeng YP
;
Wang ZG
;
Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)
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View/Download:1057/258
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Submit date:2010/10/29
Short-period Superlattices
Raman-scattering
Quantum-wells
Growth
Roughness
Segregation
Alas/gaas
Alas
Gaas
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer
期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 92, 期号: 1, 页码: 511-514
Authors:
Zhang ZY
;
Xu B
;
Jin P
;
Meng XQ
;
Li CM
;
Ye XL
;
Wang ZG
;
Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(170Kb)
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View/Download:1076/286
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Submit date:2010/08/12
Molecular-beam Epitaxy
1.3 Mu-m
Temperature-dependence
Growth
Gaas
Lasers
Optical properties of InGaAs quantum dots formed on InAlAs wetting layer
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46
Authors:
Zhang YC
;
Huang CJ
;
Xu B
;
Ye XL
;
Ding D
;
Wang JZ
;
Li YF
;
Liu F
;
Wang ZG
;
Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(187Kb)
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View/Download:1004/292
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Submit date:2010/08/12
Nanostructures
Molecular Beam Epitaxy
Semiconducting Iii-v Materials
Electron-phonon Interactions
Temperature-dependence
Semiconductor Nanocrystals
Carrier Transfer
Inas
Gaas
Lasers
Islands
Growth
Gain
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates
会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:
Sun ZZ
;
Liu FQ
;
Wu J
;
Ye XL
;
Ding D
;
Xu B
;
Liang JB
;
Wang ZG
;
Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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View/Download:918/262
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Submit date:2010/11/15
Self-assembled Quantum Dots
Inp Substrate
High Index
Mbe
In(Ga
Molecular-beam-epitaxy
Al)as/inAlas/inp
Vapor-phase Epitaxy
Gaas
Islands
Photoluminescence
Inp(001)
Growth
Lasers
Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate
期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 1, 页码: 533-536
Authors:
Sun S
;
Wu J
;
Liu FQ
;
Zu HZ
;
Chen YH
;
Ye XL
;
Jiang WH
;
Xu B
;
Wang ZG
;
Sun S,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(152Kb)
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View/Download:836/247
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Submit date:2010/08/12
Molecular-beam Epitaxy
Inas Islands
Inp(001)
Growth
Gaas
Semiconductors
Thickness
Lasers
Ingaas
Size