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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [4]
集成光电子学国家重点... [1]
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张书明 [5]
江德生 [2]
朱建军 [2]
赵德刚 [2]
王玉田 [1]
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Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector
期刊论文
: JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Wang
;
H
;
Liu ZS
;
Zhang SM
;
Yang H
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(319Kb)
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View/Download:1243/307
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Submit date:2010/04/13
Nitride Materials
Photoconductivity And Photovoltaics
Computer Simulations
Films
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 5, 页码: Art. No. 055001
Authors:
Wang H
;
Jiang DS
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Wang YT
;
Zhang SM
;
Yang H
;
Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Adobe PDF(957Kb)
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View/Download:1048/234
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Submit date:2010/03/08
Molecular-beam Epitaxy
Electron-transport
Band-gap
Films
Sapphire
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells
期刊论文
APPLIED SURFACE SCIENCE, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
Authors:
Sun Q
;
Zhang JC
;
Huang Y
;
Chen J
;
Wang JF
;
Wang H
;
Li DY
;
Wang YT
;
Zhang SM
;
Yang H
;
Zhou CL
;
Guo LP
;
Jia QJ
;
Sun, Q, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: qsun@red.semi.ac.cn
Adobe PDF(427Kb)
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View/Download:1230/348
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Submit date:2010/04/11
Nitrides
Multiple Quantum Wells
Cracks
Dislocations
Vacancies X-ray Diffraction
X-ray-diffraction
Edge Dislocations
Gan
Films
Superlattices
Relaxation
Strain
Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN
期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2003, 卷号: 46, 期号: 6, 页码: 620-626
Authors:
Chen J
;
Zhang SM
;
Zhang BS
;
Zhu JJ
;
Feng G
;
Duan LH
;
Wang YT
;
Yang H
;
Zheng WC
;
Chen J,Sichuan Univ,Dept Mat Sci,Chengdu 610064,Peoples R China.
Adobe PDF(301Kb)
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View/Download:1563/630
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Submit date:2010/08/12
Gallium Nitride
Mocvd
In Situ Laser Reflectometry
Chemical-vapor-deposition
In-situ
Sapphire Substrate
Nucleation Layers
Films
Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211
Authors:
Feng ZH
;
Yang H
;
Zhang SM
;
Duan LH
;
Wang H
;
Wang YT
;
Feng ZH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(161Kb)
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View/Download:1134/289
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Submit date:2010/08/12
Crystal Morphology
Doping
Surface Structure
Metalorgamc Chemical Vapor Deposition
Nitrides
Semiconducting Iii-v Materials
Molecular-beam Epitaxy
Phase Epitaxy
Films
Cathodoluminescence