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The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 7, 页码: Article no.71914
Authors:  Zhou GY;  Chen YH;  Yu JL;  Zhou XL;  Ye XL;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 6, 页码: Art. No. 064202
Authors:  Wu J;  Lu XQ;  Jin P;  Meng XQ;  Wang ZG
Adobe PDF(279Kb)  |  Favorite  |  View/Download:1262/413  |  Submit date:2011/07/07
Light-emitting-diodes  Optical-properties  Tuning Range  Nm  Emission  Spectrum  Spectroscopy  
A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 018104
Authors:  Lu XQ;  Jin P;  Wang ZG;  Jin, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address:
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Quantum-dot  Tunable Laser  External Cavity  Broadband Tuning  Nm Tuning Range  Superluminescent Diodes  Light-source  Well Laser  Spectroscopy  Spectrum  
Broadband external cavity tunable quantum dot lasers with low injection current density 期刊论文
OPTICS EXPRESS, 2010, 卷号: 18, 期号: 9, 页码: 8916-8922
Authors:  Lv XQ;  Jin P;  Wang WY;  Wang ZG;  Lv, XQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Light-emitting-diodes  Nm Tuning Range  Superluminescent Diodes  Well Laser  Emission  Spectroscopy  Spectrum  
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 卷号: 153, 期号: 7, 页码: G703-G706
Authors:  Sun J;  Jin P;  Zhao C;  Yu LK;  Ye XL;  Xu B;  Chen YH;  Wang ZG;  Sun, J, Lund Univ, SE-22100 Lund, Sweden. E-mail:
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Gaas  Spectroscopy  Parameters  Transport  Lasers  Energy  States  Hole  
A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 卷号: 21, 期号: 6, 页码: 786-789
Authors:  Jin P;  Pan SH;  Li YG;  Zhang CZ;  Wang ZG;  Jin, P, Nankai Univ, Dept Phys, Tianjin 300071, Peoples R China. E-mail:
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Delta-doped Gaas  Franz-keldysh Oscillations  Built-in Field  Fermi-level  Photoreflectance  Surface  Spectroscopy  
Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures 期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 12, 页码: 2785-2789
Authors:  Lei W;  Chen YH;  Xu B;  Jin P;  Zhao C;  Yu LK;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail:
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Dot Infrared Photodetectors  Inas/gaas Quantum Dots  Room-temperature  Spectroscopy  Photoconductivity  Heterostructures  Transitions  Lasers  Wells  Inp  
Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 286, 期号: 1, 页码: 23-27
Authors:  Lei W;  Chen YH;  Wang YL;  Huang XQ;  Zhao C;  Liu JQ;  Xu B;  Jin P;  Zeng YP;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail:
Adobe PDF(533Kb)  |  Favorite  |  View/Download:1041/343  |  Submit date:2010/04/11
Defects  Lateral Composition Modulation  Photoluminescence  Molecular Beam Epitaxy  Quantum Wires  Semiconductor Iii-v Material  Dots  Heterostructures  Inalas/inp(001)  Spectroscopy  Wavelength  Inp(001)  
Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance 期刊论文
APPLIED SURFACE SCIENCE, 2003, 卷号: 218, 期号: 1-4, 页码: 210-214
Authors:  Jin P;  Pan SH;  Li YG;  Zhang CZ;  Wang ZG;  Jin P,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Sulfur Passivation  Franz-keldysh Oscillations  Undoped-n(+) Type Gaas  Complex Fourier Transformation  Franz-keldysh Oscillations  Gaas(001) Surfaces  Gaas(100)  Photoemission  Spectroscopy  Enhancement  
Fourier transformation study of the Franz-Keldysh Oscillation in SIN+ GaAs structures 期刊论文
ACTA PHYSICA SINICA, 2000, 卷号: 49, 期号: 9, 页码: 1821-1828
Authors:  Jin P;  Pan SH;  Liang JB;  Jin P,Nankai Univ,Dept Phys,Tianjin 300071,Peoples R China.
Adobe PDF(496Kb)  |  Favorite  |  View/Download:903/243  |  Submit date:2010/08/12
Franz-keldysh Oscillation  Fourier Transformation  Gaas  Delta-doped Gaas  Photoreflectance  Field  Electroreflectance  Spectroscopy