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Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 31, 期号: 1, 页码: 43-47
Authors:  Cui CX;  Chen YH;  Jin P;  Xu B;  Ren YY;  Zhao C;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Patterned Substrate  Gaas  Molecular Beam Epitaxy  Nucleation Positions  Assembled Quantum Dots  Molecular-beam Epitaxy  Ge Islands  Growth  Surface  Arrays  
Selective growth of InAs islands on patterned GaAs (100) substrate 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2006, 卷号: 39, 期号: 5, 页码: 446-453
Authors:  Cui CX;  Chen YH;  Ren YY;  Xu B;  Jin P;  Zhao C;  Wang ZG;  Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: cxcui@red.semi.ac.cn
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Patterned Substrate  Molecular Beam Epitaxy  Quantum Dots  Inas  Gaas  Ingaas  Assembled Quantum Dots  Molecular-beam Epitaxy  Fabrication  
Temperature dependence of surface quantum dots grown under frequent growth interruption 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 33, 期号: 1, 页码: 207-210
Authors:  Yu LK;  Xu B;  Wang ZG;  Chen YH;  Jin P;  Zhao C;  Sun J;  Ding F;  Hu LJ;  Yu, LK, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yulike@red.semi.ac.cn
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Growth Interruption  In Segregation  Surface Oxide  Molecular Beam Epitaxy  Quantum Dots  Molecular-beam Epitaxy  Gaas  Photoluminescence  Layer  Shape  Size  
Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 286, 期号: 1, 页码: 23-27
Authors:  Lei W;  Chen YH;  Wang YL;  Huang XQ;  Zhao C;  Liu JQ;  Xu B;  Jin P;  Zeng YP;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: ahleiwen@red.semi.ac.cn
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Defects  Lateral Composition Modulation  Photoluminescence  Molecular Beam Epitaxy  Quantum Wires  Semiconductor Iii-v Material  Dots  Heterostructures  Inalas/inp(001)  Spectroscopy  Wavelength  Inp(001)  
The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 59-63
Authors:  Zhang ZY;  Jin P;  Li CM;  Ye XL;  Meng XQ;  Xu B;  Liu FQ;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Low Dimensional Structures  Nanostructures  Quantum Dots  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Laser Diode  Time-resolved Photoluminescence  
Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 198-202
Authors:  Li CM;  Liu FQ;  Zhang ZY;  Meng XQ;  Jin P;  Wang ZG;  Li CM,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Lattice-mismatch  Microstructure  Radiation  X-ray Diffraction  Molecular Beam Epitaxy  Infrared Devices  Quantum Cascade Laser  Mu-m  
Realization of quantum cascade laser operating at room temperature 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 285-289
Authors:  Li CM;  Liu FQ;  Jin P;  Wang ZG;  Li CM,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Crystal Structure  Lattice-mismatch  Microsctucture  Radiation  X-ray Diffraction  Molecular Beam Epitaxy  Infrared Devices  Quantum Cascade Laser  Mu-m  
A novel application to quantum dot materials to the active region of superluminescent diodes 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 1, 页码: 25-29
Authors:  Zhang ZY;  Meng XQ;  Jin P;  Li CM;  Qu SC;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Atomic Force Microscopy  Low Dimensional Structures  Quantum Dots  Strain  Molecular Beam Epitaxy  Superluminescent Diodes  1.3 Mu-m  High-power  Integrated Absorber  Inas Islands  Spectrum  Window  Layer  Size  
Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 3-4, 页码: 432-438
Authors:  Meng XQ;  Xu B;  Jin P;  Ye XL;  Zhang ZY;  Li CM;  Wang ZG;  Meng XQ,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Low Dimensional Structures  Molecular Beam Epitaxy  Quantum Dots  Semiconducting Iii-v Materials  Photoluminescence  
A novel line-order of InAs quantum dots on GaAs 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 241, 期号: 1-2, 页码: 69-73
Authors:  Meng XQ;  Jin P;  Xu B;  Li CM;  Zhang ZY;  Wang ZG;  Meng XQ,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(184Kb)  |  Favorite  |  View/Download:1088/307  |  Submit date:2010/08/12
Low Dimensional Structures  Strain  Molecular Beam Epitaxy  Quantum Dots  Semiconducting Iii-v Materials  Shape Transition  Photoluminescence  Fabrication  Deposition  Wires  Situ