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An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 489, 期号: 2, 页码: 461-464
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Wang YT;  Jia QJ;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Nitride Materials  Crystal Growth  X-ray Diffraction  Time-resolved Photoluminescence  Light-emitting-diodes  Piezoelectric Fields  Laser-diodes  Dependence  Recombination  Polarization  Dynamics  Growth  Mocvd  
Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 1, 页码: Art. No. 015108
Authors:  Liu WB;  Zhao DG;  Sun X;  Zhang S;  Jiang DS;  Wang H;  Zhang SM;  Liu ZS;  Zhu JJ;  Wang YT;  Duan LH;  Yang H;  Liu WB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wbliu@semi.ac.cn;  dgzhao@red.semi.ac.cn
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Surface-morphology  Detectors  Growth  
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 14, 页码: Art. No. 145410
Authors:  Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
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Molecular-beam Epitaxy  Phase Epitaxy  Quantum Dots  Band-gap  Growth  Surfaces  
Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 15, 页码: 2217-2219
Authors:  Pan Z;  Li LH;  Lin YW;  Sun BQ;  Jiang DS;  Ge WK;  Pan Z,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Ingaasn  Laser  Operation  Alloys  Growth  Gaas  
Excitation transfer in vertically self-organized pairs of unequal-sized InAs/GaAs quantum dots 期刊论文
CHINESE PHYSICS LETTERS, 2000, 卷号: 17, 期号: 8, 页码: 615-616
Authors:  Wang HL;  Feng SL;  Yang FH;  Sun BQ;  Jiang DS;  Wang HL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Growth  Gaas  Photoluminescence  Luminescence  Relaxation  Gaas(100)  Islands  
Effect of dopant on the uniformity of InAs self-organized quantum dots 期刊论文
ACTA PHYSICA SINICA-OVERSEAS EDITION, 1999, 卷号: 8, 期号: 8, 页码: 624-628
Authors:  Wang HL;  Zhu HJ;  Feng SL;  Ning D;  Wang H;  Wang XD;  Jiang DS;  Wang HL,Chinese Acad Sci,Natl Lab Superlattices & Microstruct,Inst Semicond,Beijing 100083,Peoples R China.
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Infrared-absorption  Growth  Gaas  
Double crystal X-ray diffraction study of MBE self-organized InAs quantum dots 期刊论文
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 1998, 卷号: 41, 期号: 2, 页码: 172-176
Authors:  Wang YT;  Zhuang Y;  Ma WQ;  Wang W;  Yang XP;  Chen ZG;  Jiang DS;  Zheng HZ;  Wang YT,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(313Kb)  |  Favorite  |  View/Download:976/341  |  Submit date:2010/08/12
Quantum Dots  X-ray Diffraction  Growth  Dynamic Theory  Photoluminescence  Molecular-beam Epitaxy  Resolution  Gaas(100)  Gaas