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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Source Publication:JOURNAL OF CRYSTAL GROWTH
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Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 504, 页码: 7-12
Authors:
X.F. Liu
;
G.G. Yan
;
B. Liu
;
Z.W. Shen
;
Z.X. Wen
;
J. Chen
;
W.S. Zhao
;
L. Wang
;
F. Zhang
;
G.S. Sun
;
Y.P. Zeng
Adobe PDF(1804Kb)
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View/Download:75/0
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Submit date:2019/11/15
Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 389, 页码: 1-4
Authors:
Li, HJ
;
Liu, CB
;
Liu, GP
;
Wei, HY
;
Jiao, CM
;
Wang, JX
;
Zhang, H
;
Jin, DD
;
Feng, YX
;
Yang, SY
;
Wang, LS
;
Zhu, QS
;
Wang, ZG
Adobe PDF(1080Kb)
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View/Download:436/78
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Submit date:2015/04/02
Interface effect on structural and optical properties of type II InAs/GaSb superlattices
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 407, 页码: 37-41
Authors:
Huang, Jianliang
;
Ma, Wenquan
;
Wei, Yang
;
Zhang, Yanhua
;
Cui, Kai
;
Shao, Jun
Adobe PDF(463Kb)
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Submit date:2015/03/16
Epitaxial growth of non-polar m-plane AIN film on bare and ZnO buffered m-sapphire
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 391, 页码: 111-115
Authors:
Wang, HT
;
Jia, CH
;
Xu, JK
;
Chen, YH
;
Chen, XW
;
Zhang, WF
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View/Download:284/4
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Submit date:2015/04/02
AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 9-13
Authors:
Dong, P
;
Yan, JC
;
Zhang, Y
;
Wang, JX
;
Zeng, JP
;
Geng, C
;
Cong, PP
;
Sun, LL
;
Wei, TB
;
Zhao, LX
;
Yan, QF
;
He, CG
;
Qin, ZX
;
Li, JM
Adobe PDF(2410Kb)
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View/Download:428/75
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Submit date:2015/03/25
AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 9-13
Authors:
Dong, P
;
Yan, JC
;
Zhang, Y
;
Wang, JX
;
Zeng, JP
;
Geng, C
;
Cong, PP
;
Sun, LL
;
Wei, TB
;
Zhao, LX
;
Yan, QF
;
He, CG
;
Qin, ZX
;
Li, JM
Adobe PDF(2410Kb)
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View/Download:584/93
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Submit date:2015/03/25
Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 394, 页码: 7-10
Authors:
Zhang, YH
;
Wei, TB
;
Wang, JX
;
Fan, C
;
Chen, Y
;
Hu, Q
;
Li, JM
Adobe PDF(2257Kb)
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View/Download:471/61
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Submit date:2015/04/02
Hydride vapor phase epitaxy of high quality {10over-barover-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 387, 页码: 101-105
Authors:
Yang, JK
;
Wei, TB
;
Huo, ZQ
;
Hu, Q
;
Zhang, YH
;
Duan, RF
;
Wang, JX
Adobe PDF(1586Kb)
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Submit date:2015/03/20
The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 396, 页码: 33-37
Authors:
Du, WN
;
Yang, XG
;
Wang, XY
;
Pan, HY
;
Ji, HM
;
Luo, S
;
Yang, T
;
Wang, ZG
Adobe PDF(1747Kb)
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View/Download:317/33
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Submit date:2015/04/02
Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 55-60
Authors:
Wang, XY
;
Yang, XG
;
Du, WN
;
Ji, HM
;
Luo, S
;
Yang, T
Adobe PDF(2425Kb)
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View/Download:286/33
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Submit date:2015/03/25