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Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
Authors:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
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Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation  
无权访问的条目 期刊论文
Authors:  Xu HZ;  Wang ZG;  Harrison I;  Bell A;  Ansell BJ;  Winser AJ;  Cheng TS;  Foxon CT;  Kawabe M;  Kawabe M,Univ Tsukuba,Inst Appl Phys,Tsukuba,Ibaraki 3058573,Japan.
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无权访问的条目 期刊论文
Authors:  Wang SZ;  Xie SW;  Pang QJ;  Zheng H;  Xia YX;  Ji RB;  Wu Y;  He L;  Zhu ZM;  Li GH;  Wang ZP;  Wang SZ,Shanghai Jiao Tong Univ,Dept Appl Phys,Lab Optoelect Mat & Optoelect Devices,Shanghai 200030,Peoples R China.
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无权访问的条目 期刊论文
Authors:  Xu HZ;  Wang ZG;  Kawabe M;  Harrison I;  Ansell BJ;  Foxon CT;  Xu HZ,Univ Tsukuba,Inst Appl Phys,Tsukuba,Ibaraki 3058573,Japan.
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