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Size evolution and optical properties of self-assembled InAs quantum dots on different matrix 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 卷号: 19, 期号: 3, 页码: 292-297
Authors:  He J;  Xu B;  Wang ZG;  Qu SC;  Liu FQ;  Zhu TW;  He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Self-assembled  Mbe  Quantum Dots  Photoluminescence  1.3 Mu-m  Temperature-dependence  Excited-states  Inxga1-xas  Lasers  Inp  
Optical properties of InGaAs self-assembled quantum dots with InAlAs wetting layer 期刊论文
ACTA PHYSICA SINICA, 2003, 卷号: 52, 期号: 8, 页码: 2087-2091
Authors:  Zhu TW;  Zhang YC;  Xu B;  Liu FQ;  Wang ZG;  Zhu TW,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Ingaas Quantum Dots  Inalas Wetting Layer  Photoluminescence Spectra  Temperature-dependence  
Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 11, 页码: 8898-8902
Authors:  He J;  Zhang YC;  Xu B;  Wang ZG;  He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Scanning-tunneling-microscopy  Growth  Islands  Nm  
Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer 期刊论文
SOLID STATE COMMUNICATIONS, 2003, 卷号: 126, 期号: 7, 页码: 391-394
Authors:  Zhang ZY;  Yang CL;  Wei YQ;  Ye XL;  Jin P;  Li CM;  Meng XQ;  Xu B;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Nanostructures  Semiconductors  Optical Properties  Epitaxy  
Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 7, 页码: 4169-4172
Authors:  Jin P;  Meng XQ;  Zhang ZY;  Li CM;  Xu B;  Liu FQ;  Wang ZG;  Li YG;  Zhang CZ;  Pan SH;  Jin P,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: pengjin@red.semi.ac.cn
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Franz-keldysh Oscillations  Microscopy  Islands  
Modulation spectroscopy of GaAs covered by InAs quantum dots 期刊论文
CHINESE PHYSICS LETTERS, 2002, 卷号: 19, 期号: 7, 页码: 1010-1012
Authors:  Jin P;  Meng XQ;  Zhang ZY;  Li CM;  Qu SC;  Xu B;  Liu FQ;  Wang ZG;  Li YG;  Zhang CZ;  Pan SH;  Jin P,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Franz-keldysh Oscillations  Microscopy  Surfaces  Islands  Layer  
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 92, 期号: 1, 页码: 511-514
Authors:  Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  1.3 Mu-m  Temperature-dependence  Growth  Gaas  Lasers  
Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate 期刊论文
APPLIED PHYSICS LETTERS, 2002, 卷号: 80, 期号: 20, 页码: 3769-3771
Authors:  Liu HY;  Sellers IR;  Airey RJ;  Steer MJ;  Houston PA;  Mowbray DJ;  Cockburn J;  Skolnick MS;  Xu B;  Wang ZG;  Liu HY,Univ Sheffield,Dept Elect & Elect Engn,EPSRC,Cent Facil Semicond 3 5,Sheffield S1 3JD,S Yorkshire,England.
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Molecular-beam Epitaxy  High-power  Laser-diodes  Nm  
Growth and characterization of InGaAs/InAlAs quantum cascade lasers 期刊论文
SOLID-STATE ELECTRONICS, 2001, 卷号: 45, 期号: 10, 页码: 1831-1835
Authors:  Liu FQ;  Zhang QS;  Zhang YZ;  Ding D;  Xu B;  Wang ZG;  Liu FQ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(153Kb)  |  Favorite  |  View/Download:919/305  |  Submit date:2010/08/12
Quantum Cascade Laser  Molecular Beam Epitaxy  Molecular-beam Epitaxy  Mu-m  
High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 79, 期号: 18, 页码: 2868-2870
Authors:  Liu HY;  Xu B;  Wei YQ;  Ding D;  Qian JJ;  Han Q;  Liang JB;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Temperature-dependence