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无权访问的条目 期刊论文
作者:  Li T;  Zhao SZ;  Zuo Z;  Wang YG;  Li GQ;  Zhao SZ Shandong Univ Sch Informat Sci & Engn Jinan 250100 Shandong Peoples R China. E-mail Address: shengzhi_zhao@sdu.edu.cn
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无权访问的条目 期刊论文
作者:  Li H;  Wang Z;  Zhou K;  Pang JB;  Ke JY;  Zhao YW;  Wang Z Wuhan Univ Dept Phys Wuhan 430072 Peoples R China. E-mail Address: wangz@whu.edu.cn
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无权访问的条目 期刊论文
作者:  Zhang Z;  Zhang R;  Xie ZL;  Liu B;  Li M;  Fu DY;  Fang HN;  Xiu XQ;  Lu H;  Zheng YD;  Chen YH;  Tang CG;  Wang ZG;  Zhang R Nanjing Univ Key Lab Adv Photon & Elect Mat Nanjing 210093 Peoples R China. E-mail Address: rzhang@nju.edu.cn
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无权访问的条目 期刊论文
作者:  Li T;  Zhao SZ;  Zhuo Z;  Wang YG;  Zhao SZ Shandong Univ Sch Informat Sci & Engn Jinan 250100 Shandong Peoples R China. E-mail Address: shengzhi_zhao@sdu.edu.cn
Adobe PDF(669Kb)  |  收藏  |  浏览/下载:1343/585  |  提交时间:2010/03/08
无权访问的条目 期刊论文
作者:  Ding K (Ding, K.);  Zeng YP (Zeng, Y. P.);  Wei XC (Wei, X. C.);  Li ZC (Li, Z. C.);  Wang JX (Wang, J. X.);  Lu HX (Lu, H. X.);  Cong PP (Cong, P. P.);  Yi XY (Yi, X. Y.);  Wang GH (Wang, G. H.);  Li JM (Li, J. M.);  Ding, K, Chinese Acad Sci, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dingkai@red.semi.ac.cn
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无权访问的条目 期刊论文
作者:  Xu Y;  Chen LH;  Li YZ;  Song GF;  Wang YP;  Zhuang WD;  Long Z;  Xu, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xuyun@red.semi.ac.cn
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无权访问的条目 期刊论文
作者:  Zhuo, Z;  Li, T;  Wang, YG;  Zhuo, Z, Shandong Univ, Shanda Luneng Informat & Technol Co Ltd, Jinan 250100, Shandong, Peoples R China. 电子邮箱地址: zhuozhuang@sdu.edu.cn
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Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yan, JC;  Wang, JX;  Liu, NX;  Liu, Z;  Li, JM;  Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(471Kb)  |  收藏  |  浏览/下载:1998/557  |  提交时间:2010/03/09
Algan  Gan Template  A1n Interlayer  Mocvd  Crack  Interference Fringes  
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Liu, NX;  Yan, JC;  Liu, Z;  Ma, P;  Wang, JX;  Li, JM;  Liu, NX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(370Kb)  |  收藏  |  浏览/下载:2260/749  |  提交时间:2010/03/09
Algan  Ht-algan Buffer  Ht-interlayers  Ultraviolet (Uv) Led  
High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Yan, JC;  Wang, JX;  Liu, Z;  Liu, NX;  Li, JM;  Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3352Kb)  |  收藏  |  浏览/下载:1138/217  |  提交时间:2010/03/09
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