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Research status of electro-absorption modulated lasers 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES V 丛书: Proceedings of SPIE 卷: 7987, Shanghai, 2010
Authors:  Zhu HL;  Liang S;  Zhao LJ;  Kong DH;  Wang W
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单片集成电吸收调制分布反馈激光器 期刊论文
光电子·激光, 2011, 卷号: 22, 期号: 1, 页码: 13-15
Authors:  朱洪亮;  梁松;  李宝霞;  赵玲娟;  王宝军;  边静;  许晓冬;  朱小宁;  王圩
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二维GaAs基光子晶体微腔的制作与光谱特性分析 期刊论文
物理学报, 2010, 卷号: 59, 期号: 10, 页码: 7073-7077
Authors:  彭银生;  叶小玲;  徐波;  牛洁斌;  贾锐;  王占国;  梁松;  杨晓红
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取样光栅分布反馈激光器阵列器件研究 期刊论文
光电子·激光, 2010, 卷号: 21, 期号: 9, 页码: 1280-1282
Authors:  朱洪亮;  许晓冬;  王桓;  孔端花;  梁松;  王宝军;  赵玲娟;  王圩
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A ridge width varied two-section index-coupled DFB self-pulsation laser with a wide continuously tunable frequency range 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 12, 页码: Art. No. 125105
Authors:  Kong DH;  Zhu HL;  Liang S;  Zhang HG;  Sun Y;  Wang H;  Zhang W;  Zhao LJ;  Kong DH Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: kdh@semi.ac.cn;  Liangsong@red.semi.ac.cn
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Distributed-feedback Laser  Optical Clock Recovery  Generation  
Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 5, 页码: Art. No. 055310
Authors:  Liang S;  Zhu HL;  Ye XL;  Pan JQ;  Zhao LJ;  Wang W;  Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
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Chemical-vapor-deposition  Multiatomic Steps  Islands  Growth  Fabrication  Epitaxy  
Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 8, 页码: 2281-2284
Authors:  Liang S;  Zhu HL;  Ye XL;  Wang W;  Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: liangsong@red.semi.ac.cn
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Photoluminescence  Metalorganic Vapor Phase Epitaxy  Self-assembled Quantum Dots  Indium Arsenide  
Shape stability of InAs self-assembled islands on vicinal GaAs(001) substrates 期刊论文
CHEMICAL PHYSICS LETTERS, 2009, 卷号: 468, 期号: 4-6, 页码: 249-252
Authors:  Liang S;  Zhu HL;  Wang W;  Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
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Quantum-dots  Transition  Gaas(100)  Growth  Gaas  
长波长InAs/GaAs量子点的MOCVD生长及激光器制作 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  梁松
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模式相干的双模半导体激光器结构 专利
专利类型: 发明, 申请日期: 2008-12-03, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王列松;  赵玲娟;  王圩;  朱洪亮;  潘教青;  梁松
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