SEMI OpenIR  > 中科院半导体材料科学重点实验室
单片集成电吸收调制分布反馈激光器
朱洪亮; 梁松; 李宝霞; 赵玲娟; 王宝军; 边静; 许晓冬; 朱小宁; 王圩
2011
Source Publication光电子·激光
Volume22Issue:1Pages:13-15
Abstract提出一种选择区域外延双有源区叠层(SAG-DSAL)结构新技术,基于此技术设计研制了单片集成电吸收调制激光器(EML),SAG-DSAL-EML管芯的阈值电流为20 mA,工作电流为100 mA时的出光功率为10 mW,由吸收调制器(EAM)加-3 V偏压时的消光比为12 dB,实现了简化制作工艺并提高器件性能的预期目的,有望用于规模化生产
metadata_83中科院半导体材料科学重点实验室
Subject Area半导体材料
Funding Organization国家"863"计划资助项目,国家自然科学基金资助项目,国家"973"计划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:4123464
Date Available2011-08-16
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21630
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
朱洪亮,梁松,李宝霞,等. 单片集成电吸收调制分布反馈激光器[J]. 光电子·激光,2011,22(1):13-15.
APA 朱洪亮.,梁松.,李宝霞.,赵玲娟.,王宝军.,...&王圩.(2011).单片集成电吸收调制分布反馈激光器.光电子·激光,22(1),13-15.
MLA 朱洪亮,et al."单片集成电吸收调制分布反馈激光器".光电子·激光 22.1(2011):13-15.
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单片集成电吸收调制分布反馈激光器.pdf(349KB) 限制开放--Application Full Text
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