SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-8 of 8 Help

Filters        
Selected(0)Clear Items/Page:    Sort:
Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 5, 页码: Art. No. 055310
Authors:  Liang S;  Zhu HL;  Ye XL;  Pan JQ;  Zhao LJ;  Wang W;  Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(422Kb)  |  Favorite  |  View/Download:1104/339  |  Submit date:2010/03/08
Chemical-vapor-deposition  Multiatomic Steps  Islands  Growth  Fabrication  Epitaxy  
模式相干的双模半导体激光器结构 专利
专利类型: 发明, 申请日期: 2008-12-03, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王列松;  赵玲娟;  王圩;  朱洪亮;  潘教青;  梁松
Adobe PDF(760Kb)  |  Favorite  |  View/Download:1082/226  |  Submit date:2009/06/11
Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition 期刊论文
CHINESE PHYSICS B, 2008, 卷号: 17, 期号: 11, 页码: 4300-4304
Authors:  Liang S;  Zhu HL;  Pan JQ;  Zhao LJ;  Wang LF;  Zhou F;  Shu HY;  Bian J;  An X;  Wang W;  Liang, S, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: liangsong@red.semi.ac.cn
Adobe PDF(457Kb)  |  Favorite  |  View/Download:1074/262  |  Submit date:2010/03/08
Metal-organic Chemical Vapour Deposition  
Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates 会议论文
Proceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials, Hangzhou, PEOPLES R CHINA, OCT 16-18, 2006
Authors:  Liang S;  Zhu HL;  Zhou JT;  Cheng YB;  Pan JQ;  Zhao LJ;  Wang W;  Liang, S, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(245Kb)  |  Favorite  |  View/Download:809/227  |  Submit date:2010/03/29
Chemical-vapor-deposition  
Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD 期刊论文
CHINESE PHYSICS, 2006, 卷号: 15, 期号: 5, 页码: 1114-1119
Authors:  Liang S;  Zhu HL;  Pan JQ;  Wang W;  Liang, S, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. E-mail: liangsong@red.semi.ac.cn
Adobe PDF(1162Kb)  |  Favorite  |  View/Download:1009/206  |  Submit date:2010/04/11
Self-assembled Quantum Dots  Indium Arsenide  Bimodal Size Distribution  Mocvd  Chemical-vapor-deposition  Mu-m  Islands  Density  Epitaxy  Laser  
Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 289, 期号: 2, 页码: 477-484
Authors:  Liang S;  Zhu HL;  Pan JQ;  Ye XL;  Wang W;  Liang, S, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. E-mail: liangsong@red.semi.ac.cn
Adobe PDF(399Kb)  |  Favorite  |  View/Download:850/293  |  Submit date:2010/04/11
Bimodal Size Distribution  Metalorganic Vapor Phase Epitaxy  Self-assembled Quantum Dots  Indium Arsenide  Phase-epitaxy  Islands  Ingaas  Size  Laser  
Effect of annealing on optical properties of InAs quantum dots grown by MOCVD on GaAs (100) vicinal substrates 期刊论文
CHINESE PHYSICS LETTERS, 2005, 卷号: 22, 期号: 10, 页码: 2692-2695
Authors:  Liang S;  Zhu HL;  Pan JQ;  Zhao LJ;  Wang W;  Liang, S, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. 电子邮箱地址: liangsong@red.semi.ac.cn
Adobe PDF(207Kb)  |  Favorite  |  View/Download:727/205  |  Submit date:2010/03/17
Epitaxy  
Growth of Space Ordered on GaAs(100) Vicinal 1.3μm InAs Quantum Dots Substrates by MOCVD 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 11, 页码: 2074-2079
Authors:  Liang song;  Zhu Hongliang;  Pan Jiaoqing;  Wang Wei
Adobe PDF(421Kb)  |  Favorite  |  View/Download:691/203  |  Submit date:2010/11/23