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Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
Authors:  Zhang Z;  Zhang R;  Xie ZL;  Liu B;  Xiu XQ;  Li Y;  Fu DY;  Lu H;  Chen P;  Han P;  Zheng YD;  Tang CG;  Chen YH;  Wang ZG;  Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Zhang Z Nanjing Univ Jiangsu Prov Key Lab Adv Photon & Elect Mat Nanjing 210093 Peoples R China. E-mail Address: rzhang@nju.edu.cn
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Inn  Dislocation  Carrier Origination  Localization  
Interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 92, 期号: 16, 页码: Art. No. 161112
Authors:  Chen P;  Zuo YH;  Tu XG;  Cai DJ;  Li SP;  Kang JY;  Yu YD;  Yu JZ;  Wang QM;  Chen, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: pchen@semi.ac.cn
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Mach-zehnder Interferometer  
Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G 会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
Authors:  Chen P;  Lib SP;  Tu XG;  Zuo YH;  Zhao L;  Chen SW;  Li JC;  Lin W;  Chen HY;  Liu DY;  Kang JY;  Yu YD;  Yu JZ;  Wang QM;  Chen, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
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Pockels Effect  
Enhanced Pockels effect in GaN/AlxGa1-xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 3, 页码: Art.No.031103
Authors:  Chen P;  Tu XG;  Li SP;  Li JC;  Lin W;  Chen HY;  Liu DY;  Kang JY;  Zuo YH;  Zhao L;  Chen SW;  Yu YD;  Yu, JZ;  Wang QM;  Chen, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: pchen@semi.ac.cn
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Quantum-wells  
基于微环谐振器的集成化可重构光插分复用器 专利
专利类型: 发明, 专利号: CN201010143079.5, 公开日期: 2011-08-31
Inventors:  田永辉;  杨林;  冀瑞强;  张磊;  贾连希;  卢洋洋;  陈平;  刘育梁
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一种集成化可重构光插分复用器 专利
专利类型: 发明, 专利号: CN201010162323.2, 公开日期: 2011-08-31
Inventors:  田永辉;  杨林;  冀瑞强;  卢洋洋;  张磊;  贾连希;  陈平
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一种硅基集成化的光学加密调制器 专利
专利类型: 发明, 专利号: CN200910237843.2, 公开日期: 2011-08-31
Inventors:  张磊;  杨林;  陈平;  贾连希;  冀瑞强;  田永辉;  卢洋洋;  刘育梁
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