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Demonstration of directed XOR/XNOR logic gates using two cascaded microring resonators 期刊论文
Optics Letters, 2010, 卷号: 35, 期号: 10, 页码: 1620-1622
Authors:  Zhang L(张磊);  Ji RQ(冀瑞强);  Jia LX(贾连希);  Yang L(杨林);  Zhou P(周平);  Tian YH(田永辉);  Chen P(陈平);  Lu YY(卢洋洋);  Jiang ZY(姜震宇);  Liu YL(刘育梁);  Fang Q(方青);  Yu MB(余明斌)
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IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES 期刊论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2010, 卷号: 24, 期号: 27, 页码: 5439-5450
Authors:  Hao GD;  Chen YH;  Hao, GD, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Box 912, Beijing 100083, Peoples R China. gdhao@semi.ac.cn
Adobe PDF(327Kb)  |  Favorite  |  View/Download:756/226  |  Submit date:2011/07/05
Strain Effect  Optical Anisotropy  A-plane  R-plane  Continuous-wave Operation  Light-emitting-diodes  Laser-diodes  Polarization Anisotropy  Quantum-wells  Semiconductors  
Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress 期刊论文
PHYSICAL REVIEW LETTERS, 2010, 卷号: 104, 期号: 6, 页码: Art. No. 067405
Authors:  Ding F;  Singh R;  Plumhof JD;  Zander T;  Krapek V;  Chen YH;  Benyoucef M;  Zwiller V;  Dorr K;  Bester G;  Rastelli A;  Schmidt OG;  Ding, F, IFW Dresden, Inst Integrat Nanosci, Helmholtzstr 20, D-01069 Dresden, Germany. E-mail Address: f.ding@ifw-dresden.de;  g.bester@fkf.mpg.de;  a.rastelli@ifw-dresden.de
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Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 卷号: 43, 期号: 48, 页码: Art. No. 485102
Authors:  Zhou XL (Zhou X. L.);  Chen YH (Chen Y. H.);  Jia CH (Jia C. H.);  Ye XL (Ye X. L.);  Xu B (Xu Bo);  Wang ZG (Wang Z. G.);  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhouxl06@semi.ac.cn
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Dependence  Spectra  
Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 卷号: 99, 期号: 2, 页码: 511-514
Authors:  Jia CH;  Chen YH;  Zhou XL;  Yang AL;  Zheng GL;  Liu;  XL;  Yang SY;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
Adobe PDF(359Kb)  |  Favorite  |  View/Download:1636/600  |  Submit date:2010/06/04
Batio3  Srtio3  
Kondo effect in a triangular triple quantum dots ring with three terminals 期刊论文
SOLID STATE COMMUNICATIONS, 2010, 卷号: 150, 期号: 25-26, 页码: 1136-1140
Authors:  Liu Y (Liu Yu);  Chen YH (Chen Yonghai);  Wang ZG (Wang Zhanguo);  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(363Kb)  |  Favorite  |  View/Download:1016/328  |  Submit date:2010/07/05
Quantum Dot  Symmetry  Kondo Effect  Fano Effect  Single-electron Transistor  Spin  
A Photovoltaic InAs Quantum-Dot Infrared Photodetector 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 4, 页码: Art. No. 047801
Authors:  Tang GH (Tang Guang-Hua);  Xu B (Xu Bo);  Jiang;  LW (Jiang Li-Wen);  Kong JX (Kong Jin-Xia);  Kong;  N (Kong Ning);  Liang DC (Liang De-Chun);  Liang P (Liang Ping);  Ye XL (Ye Xiao-Ling);  Jin P (Jin Peng);  Liu FQ (Liu Feng-Qi);  Chen YH (Chen Yong-Hai);  Wang ZG (Wang Zhan-Guo);  Tang, GH, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: tghsugar@semi.ac.cn
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Mu-m  Temperature  Detectors  Operation  
Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 卷号: 43, 期号: 29, 页码: Art. No. 295401
Authors:  Zhou XL (Zhou X. L.);  Chen YH (Chen Y. H.);  Liu JQ (Liu J. Q.);  Jia CH (Jia C. H.);  Zhou GY (Zhou G. Y.);  Ye XL (Ye X. L.);  Xu B (Xu Bo);  Wang ZG (Wang Z. G.)
Adobe PDF(225Kb)  |  Favorite  |  View/Download:1399/411  |  Submit date:2010/08/17
Carrier Relaxation  States  Superlattices  Confinement  Laser  
Stretchable Graphene: A Close Look at Fundamental Parameters through Biaxial Straining 期刊论文
NANO LETTERS, 2010, 卷号: 10, 期号: 9, 页码: 3453-3458
Authors:  Ding F (Ding Fei);  Ji HX (Ji Hengxing);  Chen YH (Chen Yonghai);  Herklotz A (Herklotz Andreas);  Dorr K (Doerr Kathrin);  Mei YF (Mei Yongfeng);  Rastelli A (Rastelli Armando);  Schmidt OG (Schmidt Oliver G.)
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Graphene  Strain Engineering  Gruneisen Parameters  Raman Spectroscopy  Piezoelectric Actuator  
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Authors:  Liu B;  Zhang Z;  Zhang R;  Fu DY;  Xie ZL;  Lu H;  Schaff WJ;  Song LH;  Cui YC;  Hua XM;  Han P;  Zheng YD;  Chen YH;  Wang ZG;  Zhang, R, Nanjing Univ, Dept Phys, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China. 电子邮箱地址: rzhang@nju.edu.cn
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Band-gap  Temperature-dependence  Energy  Semiconductors  Spectra  Epitaxy  Growth  Layers