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The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:  Sun XL;  Wang YY;  Yang H;  Li JB;  Zheng LX;  Xu DP;  Wang ZG;  Sun XL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol Beijing 100083 Peoples R China.
Adobe PDF(206Kb)  |  收藏  |  浏览/下载：1470/311  |  提交时间：2010/11/15
Metalorganic Chemical Vapor Deposition  Cubic Gan  Hexagonal Phase Content  4-circle X-ray Double Crystal Diffraction  Molecular-beam Epitaxy  Gallium Nitride  Thin-films  Silicon  Gaas  
The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process 会议论文
NITRIDE SEMICONDUCTORS, 482, BOSTON, MA, DEC 01-05, 1997
作者:  Zheng LX;  Liang JW;  Yang H;  Li JB;  Wang YT;  Xu DP;  Li XF;  Duan LH;  Hu XW;  Zheng LX Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(341Kb)  |  收藏  |  浏览/下载：940/211  |  提交时间：2010/10/29
Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials 会议论文
REVISTA MEXICANA DE FISICA, 44, OAXACA, MEXICO, JAN 11-16, 1998
作者:  Zou LF;  Acosta-Ortiz SE;  Zou LX;  Regalado LE;  Sun DZ;  Wang ZG;  Zou LF Ctr Invest Opt AC Unidad Aguascalientes Juan Montoro 207Zona Ctr Aguascalientes 20000 Ags Mexico. 电子邮箱地址: lfzou@ags.ciateq.mx
Adobe PDF(850Kb)  |  收藏  |  浏览/下载：1141/187  |  提交时间：2010/11/15
Strain Relaxation  Heterostructures  
Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001) 会议论文
REVISTA MEXICANA DE FISICA, 44, OAXACA, MEXICO, JAN 11-16, 1998
作者:  Zou LF;  Acosta-Ortiz SE;  Zou LX;  Regalado LE;  Sun DZ;  Wang ZG;  Zou LF Ctr Invest Opt AC Unidad Aguascalientes Juan Montoro 207Zona Ctr Aguascalientes 20000 Ags Mexico.
Adobe PDF(1208Kb)  |  收藏  |  浏览/下载：1311/219  |  提交时间：2010/11/15
Electrical-properties  Ion-implantation  Regrowth  Silicon  Layers