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Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Authors:  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Wang BQ (Wang B. Q.);  Zhu ZP (Zhu Z. P.);  Cui, LJ, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. E-mail: ljcui@red.semi.ac.cn
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Characterization  Point Defects  Molecular Beam Epitaxy  Semiconducting Gallium Compounds  Semiconducting Indium Compounds  Semiconducting Ternary Compounds  1.55 Mu-m  Quantum-wells  Temperature  Gaas  
Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 3, 页码: Art.No.033705
Authors:  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Wang BQ (Wang B. Q.);  Zhu ZP (Zhu Z. P.);  Guo SL (Guo S. L.);  Chu JH (Chu J. H.);  Cui, LJ, Chinese Acad Sci, Novel Mat Lab, Inst Semicond, Beijing 100083, Peoples R China. E-mail: ljcui@red.semi.ac.cn
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Quantum-well Structures  Photoluminescence Spectra  Hemts  
The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity 期刊论文
APPLIED SURFACE SCIENCE, 2006, 卷号: 252, 期号: 12, 页码: 4104-4109
Authors:  Wang XF;  Zeng YP;  Wang BQ;  Zhu ZP;  Du XQ;  Li M;  Chang BK;  Wang, XF, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: xiaofw@red.semi.ac.cn
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Structure  Nea  Integrated Photosensitivity  Gaas  Cs : o  Spectral Response  Nea Photocathodes  Layer Thickness  Cs  Surface  Photoemission  System  
Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文
CHINESE PHYSICS, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338
Authors:  Zhang Y;  Zeng YP;  Ma L;  Wang BQ;  Zhu ZP;  Wang LC;  Yang FH;  Zhang, Y, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
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Resonant Tunnelling Diode  Inp Substrate  Molecular Beam Epitaxy  High Resolution Transmission Electron Microscope  Current-voltage Characteristics  Intrinsic Bistability  Circuit