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提高非晶硅薄膜太阳能电池开路电压的方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-02-24, 2010-08-12
Inventors:  石明吉;  曾湘波;  张长沙;  刘石勇;  彭文博;  肖海波
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Quantum tunneling through graphene nanorings 期刊论文
NANOTECHNOLOGY, 2010, 卷号: 21, 期号: 18, 页码: Art. No. 185201
Authors:  Wu ZH (Wu Zhenhua);  Zhang ZZ (Zhang Z. Z.);  Chang K (Chang Kai);  Peeters FM (Peeters F. M.);  Wu, ZH, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 20, 页码: Art. No. 201102
Authors:  You JB (You J. B.);  Zhang XW (Zhang X. W.);  Zhang SG (Zhang S. G.);  Wang JX (Wang J. X.);  Yin ZG (Yin Z. G.);  Tan HR (Tan H. R.);  Zhang WJ (Zhang W. J.);  Chu PK (Chu P. K.);  Cui B (Cui B.);  Wowchak AM (Wowchak A. M.);  Dabiran AM (Dabiran A. M.);  Chow PP (Chow P. P.);  Zhang, XW, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址:;
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Zno  Deposition  
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 13, 页码: Art. No. 132908
Authors:  Zheng XH (Zheng X. H.);  Huang AP (Huang A. P.);  Xiao ZS (Xiao Z. S.);  Yang ZC (Yang Z. C.);  Wang M (Wang M.);  Zhang XW (Zhang X. W.);  Wang WW (Wang W. W.);  Chu PK (Chu Paul K.);  Huang, AP, BeihangUniv, DeptPhys, Beijing 100191, Peoples R China. 电子邮箱地址:
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Oxygen  Gate  Diffusion  Films  
Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343
Authors:  Liu JM (Liu J. M.);  Liu XL (Liu X. L.);  Xu XQ (Xu X. Q.);  Wang J (Wang J.);  Li CM (Li C. M.);  Wei HY (Wei H. Y.);  Yang SY (Yang S. Y.);  Zhu QS (Zhu Q. S.);  Fan YM (Fan Y. M.);  Zhang XW (Zhang X. W.);  Wang ZG (Wang Z. G.)
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Valence Band Offset  W-inn/h-bn Heterojunction  X-ray Photoelectron Spectroscopy  Conduction Band Offset  Valence Band Offset  Negative Electron-affinity  Indium Nitride  Wurtzite Gan  Surface  Film  Aln  Transport  Emission  Naxwo3  Growth  
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文
DIAMOND AND RELATED MATERIALS, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376
Authors:  Ying J (Ying J.);  Zhang XW (Zhang X. W.);  Fan YM (Fan Y. M.);  Tan HR (Tan H. R.);  Yin ZG (Yin Z. G.);  Zhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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Cubic Boron Nitride  Doping  Ion Beam Assisted depositIon  X-ray Photoelectron Spectroscopy  Ray Photoelectron-spectroscopy  Vapor-deposition  Si  Nucleation  Growth  
Strong circular photogalvanic effect in ZnO epitaxial films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 4, 页码: Art. No. 041907
Authors:  Zhang Q (Zhang Q.);  Wang XQ (Wang X. Q.);  Yin CM (Yin C. M.);  Xu FJ (Xu F. J.);  Tang N (Tang N.);  Shen B (Shen B.);  Chen YH (Chen Y. H.);  Chang K (Chang K.);  Ge WK (Ge W. K.);  Ishitani Y (Ishitani Y.);  Yoshikawa A (Yoshikawa A.)
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Ii-vi Semiconductors  Photoconductivity  Photovoltaic Effects  Semiconductor Epitaxial Layers  Spin-orbit Interactions  Valence Bands  Wide Band Gap Semiconductors  Zinc Compounds  
Structure and properties of InAs/AlAs quantum dots for broadband emission 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 10, 页码: Art. No. 103515
Authors:  Meng XQ (Meng X. Q.);  Jin P (Jin P.);  Liang ZM (Liang Z. M.);  Liu FQ (Liu F. Q.);  Wang ZG (Wang Z. G.);  Zhang ZY (Zhang Z. Y.);  Meng, XQ, Wuhan Univ, Key Lab Artificial Micro & Nano Struct, Minist Educ, Wuhan 430072, Peoples R China.
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Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 卷号: 94, 期号: 10, 页码: 1704-1710
Authors:  Wang Y (Wang Y.);  Chen NF (Chen N. F.);  Zhang XW (Zhang X. W.);  Huang TM (Huang T. M.);  Yin ZG (Yin Z. G.);  Wang YS (Wang Y. S.);  Zhang H (Zhang H.)
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Thermophotovoltaic  Gallium Antimonide  Absorption Coefficient  
Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 卷号: 25, 期号: 9, 页码: Art. No. 095002
Authors:  Wang Y (Wang Y.);  Chen NF (Chen N. F.);  Zhang XW (Zhang X. W.);  Huang TM (Huang T. M.);  Yin ZG (Yin Z. G.);  Bai YM (Bai Y. M.)
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Optical Dielectric Function  Dispersion-relations  Carrier Mobilities  Phase Epitaxy  Doped Gaas  Devices  Gasb  Inp  Alxga1-xas  Ingaassb