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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
作者:  阎Zhou HY (Zhou Huiying);  Qu SC (Qu Shengchun);  Jin P (Jin Peng);  Xu B (Xu Bo);  Ye XL (Ye Xiaoling);  Liu JP (Liu Junpeng);  Wang ZG (Wang Zhanguo)
Adobe PDF(584Kb)  |  收藏  |  浏览/下载：2498/490  |  提交时间：2011/07/17
Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices 会议论文
NEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, Hong Kong, PEOPLES R CHINA, JAN 03-08, 2010
作者:  Jin P (Jin P.);  Lv XQ (Lv X. Q.);  Liu N (Liu N.);  Zhang ZY (Zhang Z. Y.);  Wang ZG (Wang Z. G.);  Wang, ZG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: zgwang@red.semi.ac.cn
Adobe PDF(141Kb)  |  收藏  |  浏览/下载：1646/330  |  提交时间：2010/11/01
Superluminescent Diodes  
Reconfigurable Optical Add-Drop Multiplexer Based on Silicon Photonic Wire Waveguide 会议论文
, Shanghai, PEOPLES R CHINA, 2009
作者:  Geng MM (Geng Minming);  Jia LX (Jia Lianxi);  Zhang L (Zhang Lei);  Yang L (Yang Lin);  Chen P (Chen Ping);  Wang T (Wang Tong);  Liu YL (Liu Yuliang);  Geng, MM, Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(406Kb)  |  收藏  |  浏览/下载：2129/516  |  提交时间：2010/06/04
Pipeline Architecture and Parallel Computation-Based Real-Time Stereovision Tracking System for Surgical Navigation 会议论文
, Singapore, SINGAPORE, 2009
作者:  Zhou P (Zhou Ping);  Liu Y (Liu Yue);  Wang YT (Wang Yongtian);  Zhou, P, Beijing Inst Technol, Ctr Res Optoelect Informat Technol & Color Engn, Beijing 100081, Peoples R China. 电子邮箱地址: savagezp@hotmail.com
Adobe PDF(656Kb)  |  收藏  |  浏览/下载：1777/490  |  提交时间：2010/04/26
Parallel Processing  
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Liang, LY;  Ye, XL;  Jin, P;  Chen, YH;  Wang, ZG;  Liang, LY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(799Kb)  |  收藏  |  浏览/下载：1599/232  |  提交时间：2010/03/09
Induced Refractive-index  Growth  Lasers  Gaas  
Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G 会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
作者:  Chen P;  Lib SP;  Tu XG;  Zuo YH;  Zhao L;  Chen SW;  Li JC;  Lin W;  Chen HY;  Liu DY;  Kang JY;  Yu YD;  Yu JZ;  Wang QM;  Chen, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(386Kb)  |  收藏  |  浏览/下载：1708/355  |  提交时间：2010/03/09
Pockels Effect  
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Liu, NX;  Yan, JC;  Liu, Z;  Ma, P;  Wang, JX;  Li, JM;  Liu, NX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(370Kb)  |  收藏  |  浏览/下载：2264/749  |  提交时间：2010/03/09
Algan  Ht-algan Buffer  Ht-interlayers  Ultraviolet (Uv) Led  
Thermal test and analysis of concentrator solar cells - art. no. 684117 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Cui M;  Chen NF;  Wu JL;  Liu L;  Wang P;  Wang YS;  Bai YM;  Cui, M, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China.
Adobe PDF(318Kb)  |  收藏  |  浏览/下载：2081/517  |  提交时间：2010/03/09
Temperature  
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Chen YH;  Tang CH;  Xu B;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(2531Kb)  |  收藏  |  浏览/下载：1360/187  |  提交时间：2010/03/09
Inas  
Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Zhao, YM (Zhao, Y. M.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1318Kb)  |  收藏  |  浏览/下载：1333/197  |  提交时间：2010/03/29
Micro-raman  4h-sic  Defects  3c-inclusions  Triangle-shaped Inclusion  Epitaxial Layers  Silicon-carbide