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Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84345
Authors:  Kong JX;  Zhu QS;  Xu B;  Wang ZG;  Kong, JX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. jxkong@semi.ac.cn
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A Photovoltaic InAs Quantum-Dot Infrared Photodetector 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 4, 页码: Art. No. 047801
Authors:  Tang GH (Tang Guang-Hua);  Xu B (Xu Bo);  Jiang;  LW (Jiang Li-Wen);  Kong JX (Kong Jin-Xia);  Kong;  N (Kong Ning);  Liang DC (Liang De-Chun);  Liang P (Liang Ping);  Ye XL (Ye Xiao-Ling);  Jin P (Jin Peng);  Liu FQ (Liu Feng-Qi);  Chen YH (Chen Yong-Hai);  Wang ZG (Wang Zhan-Guo);  Tang, GH, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: tghsugar@semi.ac.cn
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