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Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 11, 页码: Art. No. 117104
Authors:  Hao GD (Hao Guo-Dong);  Chen YH (Chen Yong-Hai);  Fan YM (Fan Ya-Ming);  Huang XH (Huang Xiao-Hui);  Wang HB (Wang Huai-Bing);  Hao, GD, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanodevices & Mat Div, Suzhou 215125, Peoples R China.
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Light-emitting-diodes  Wurtzite Semiconductors  Quantum-wells  Matrix-elements  Semipolar  Sapphire  
Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 11, 页码: Art. No. 114215
Authors:  Zeng C (Zeng Chang);  Zhang SM (Zhang Shu-Ming);  Ji L (Ji Lian);  Wang HB (Wang Huai-Bing);  Zhao DG (Zhao De-Gang);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Jiang DS (Jiang De-Sheng);  Cao Q (Cao Qing);  Chong M (Chong Ming);  Duan LH (Duan Li-Hong);  Wang H (Wang Hai);  Shi YS (Shi Yong-Sheng);  Liu SY (Liu Su-Ying);  Yang H (Yang Hui);  Chen LH (Chen Liang-Hui);  Zeng, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
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Dependence of transport properties in tunnel junction on boron doping 会议论文
Physica Status Solidi C-Current Topics in Solid State Physics VOL 7 NO 3-4, 7 (3-4): 1109-1111 2010, Utrecht, NETHERLANDS, AUG 23-28, 2009
Authors:  Shi MJ;  Zeng XB;  Liu SY;  Peng WB;  Xiao HB;  Liao XB;  Wang ZG;  Kong GL
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SiO_x:Er薄膜材料光致发光特性的研究 期刊论文
半导体技术, 2010, 卷号: 35, 期号: 9, 页码: 877-880,938
Authors:  沈海波;  郭亨群;  徐骏;  陈坤基;  王启明
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