SEMI OpenIR

Browse/Search Results:  1-5 of 5 Help

Filters    
Selected(0)Clear Items/Page:    Sort:
Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 11, 页码: Art. No. 114215
Authors:  Zeng C (Zeng Chang);  Zhang SM (Zhang Shu-Ming);  Ji L (Ji Lian);  Wang HB (Wang Huai-Bing);  Zhao DG (Zhao De-Gang);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Jiang DS (Jiang De-Sheng);  Cao Q (Cao Qing);  Chong M (Chong Ming);  Duan LH (Duan Li-Hong);  Wang H (Wang Hai);  Shi YS (Shi Yong-Sheng);  Liu SY (Liu Su-Ying);  Yang H (Yang Hui);  Chen LH (Chen Liang-Hui);  Zeng, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
Adobe PDF(802Kb)  |  Favorite  |  View/Download:1231/419  |  Submit date:2010/12/05
Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 5, 页码: Art. No. 054204
Authors:  Ji L (Ji Lian);  Zhang SM (Zhang Shu-Ming);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhang LQ (Zhang Li-Qun);  Zhu JJ (Zhu Jian-Jun);  Zhao DG (Zhao De-Gang);  Duan LH (Duan Li-Hong);  Yang H (Yang Hui);  Ji, L, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jilian@red.semi.ac.cn;  smzhang@red.semi.ac.cn
Adobe PDF(533Kb)  |  Favorite  |  View/Download:1122/395  |  Submit date:2010/05/24
Diodes  
InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 10, 页码: Art.No.107302
Authors:  Wang H (Wang Hui);  Zhu JH (Zhu Ji-Hong);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@semi.ac.cn
Adobe PDF(415Kb)  |  Favorite  |  View/Download:797/255  |  Submit date:2010/03/08
Transport Characteristics  
Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Authors:  Wang JF (Wang Jian-Feng);  Zhang BS (Zhang Bao-Shun);  Zhang JC (Zhang Ji-Cai);  Zhu JJ (Zhu Jian-Jun);  Wang YT (Wang Yu-Tian);  Chen J (Chen Jun);  Liu W (Liu Wei);  Jiang DS (Jiang De-Sheng);  Yao DZ (Yao Duan-Zheng);  Yang H (Yang Hui);  Wang, JF, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. E-mail: wlino@semi.ac.cn
Adobe PDF(270Kb)  |  Favorite  |  View/Download:1031/272  |  Submit date:2010/04/11
Chemical-vapor-deposition  High-quality Gan  Aln Buffer Layer  Nucleation Layer  Phase Epitaxy  Evolution  Density  Silicon  Stress  Si  
Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 8, 页码: 2187-2189
Authors:  Wang BZ (Wang Bao-Zhu);  Wang XL (Wang Xiao-Liang);  Hu GX (Hu Guo-Xin);  Ran JX (Ran Jun-Xue);  Wang XH (Wang Xin-Hua);  Guo LC (Guo Lun-Chun);  Xiao HL (Xiao Hong-Ling);  Li JP (Li Jian-Ping);  Zeng YP (Zeng Yi-Ping);  Li JM (Li Jin-Min);  Wang ZG (Wang Zhan-Guo);  Wang, BZ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: wangbz@semi.ac.cn
Adobe PDF(236Kb)  |  Favorite  |  View/Download:920/266  |  Submit date:2010/04/11
Light-emitting-diodes