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High efficient GaN-based laser diodes with tunnel junction 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 4, 页码: 043508
Authors:  M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang
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Electron transport in a HgTe quantum spin Hall bar with periodic electric modulations 期刊论文
SOLID STATE COMMUNICATIONS, 2013, 卷号: 161, 页码: 34-37
Authors:  Lin, Liang-Zhong;  Cheng, F.;  Zhang, D.;  Lou, Wen-Kai;  Zhang, Le-Bo
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Controlling edge state transport in a HgTe topological insulator by superlattice effect 期刊论文
Physical Review B, 2013, 卷号: 87, 期号: 24, 页码: 5311
Authors:  L.-Z. Lin, F. Cheng, L. B. Zhang, D. Zhang, and Wen Yang
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Topological insulator-graphene junction for spin transport 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 101, 期号: 24, 页码: 243102
Authors:  Li, H.;  Zhang, H. B.;  Shao, J. M.;  Zhang, Y. Y.;  Yao, D. X.;  Yang, G. W.
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Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 372, 页码: 43-48
Authors:  Su, X. J.;  Xu, K.;  Ren, G. Q.;  Wang, J. F.;  Xu, Y.;  Zeng, X. H.;  Zhang, J. C.;  Cai, D. M.;  Zhou, T. F.;  Liu, Z. H.;  Yang, H.
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Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots 期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 9, 页码: 093105
Authors:  Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B.Wang, and H. Yang
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High power buried sampled grating distributed feedback quantum cascade lasers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2013, 卷号: 113, 期号: 15, 页码: 153101
Authors:  Zhang, J. C.;  Liu, F. Q.;  Yao, D. Y.;  Zhuo, N.;  Wang, L. J.;  Liu, J. Q.;  Wang, Z. G.
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Low-threshold,high SMSR tunable external cavity quantum cascade laser around 4.7μm 期刊论文
Optical and Quantum Electronics, 2013, 卷号: 45, 期号: 11, 页码: 1147-1155
Authors:  S. Tan, J. C. Zhang, N. Zhuo, L. J. Wang, F. Q. Liu, D. Y. Yao, J. Q. Liu, Z. G. Wang
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Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness 期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 14, 页码: 143706
Authors:  Le, L. C.;  Zhao, D. G.;  Jiang, D. S.;  Li, L.;  Wu, L. L.;  Chen, P.;  Liu, Z. S.;  Yang, J.;  Li, X. J.;  He, X. G.;  Zhu, J. J.;  Wang, H.;  Zhang, S. M.;  Yang, H.
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