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Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness
Le, L. C.; Zhao, D. G.; Jiang, D. S.; Li, L.; Wu, L. L.; Chen, P.; Liu, Z. S.; Yang, J.; Li, X. J.; He, X. G.; Zhu, J. J.; Wang, H.; Zhang, S. M.; Yang, H.
2013
Source PublicationJournal of Applied Physics
Volume114Issue:14Pages:143706
Subject Area光电子学
Date Available2014-04-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24740
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Le, L. C.,Zhao, D. G.,Jiang, D. S.,et al. Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness[J]. Journal of Applied Physics,2013,114(14):143706.
APA Le, L. C..,Zhao, D. G..,Jiang, D. S..,Li, L..,Wu, L. L..,...&Yang, H..(2013).Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness.Journal of Applied Physics,114(14),143706.
MLA Le, L. C.,et al."Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness".Journal of Applied Physics 114.14(2013):143706.
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