SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-1 of 1 Help

Filters            
Selected(0)Clear Items/Page:    Sort:
采用光刻和干法刻蚀制作倾斜侧壁二氧化硅结构的方法 专利
专利类型: 发明, 专利号: CN200910081983.5, 公开日期: 2011-08-31
Inventors:  唐龙娟;  杨晋玲;  解婧;  李艳;  杨富华
Adobe PDF(415Kb)  |  Favorite  |  View/Download:1649/287  |  Submit date:2011/08/31