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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 7, 页码: Article no.75016
Authors:  Li H;  Zhou K;  Pang JB;  Shao YD;  Wang Z;  Zhao YW;  Li, H, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. wangz@whu.edu.cn
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Undoped Gallium Antimonide  Self-diffusion  Native Defects  N-type  Crystals  Cathodoluminescence  Photoluminescence  Semiconductors  Spectroscopy  Luminescence