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Approximate Hessian for accelerating ab initio structure relaxation by force fitting 期刊论文
PHYSICAL REVIEW B, 2014, 卷号: 89, 期号: 14, 页码: 144110
Authors:  Chen, ZH;  Li, JB;  Li, SS;  Wang, LW
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Ultralow-frequency shear modes of 2-4 layer graphene observed in scroll structures at edges 期刊论文
PHYSICAL REVIEW B, 2014, 卷号: 89, 期号: 23, 页码: 235404
Authors:  Tan, PH;  Wu, JB;  Han, WP;  Zhao, WJ;  Zhang, X;  Wang, H;  Wang, YF
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Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 82, 期号: 19, 页码: Art. No. 193204
Authors:  Deng HX (Deng Hui-Xiong);  Li JB (Li Jingbo);  Li SS (Li Shu-Shen);  Peng HW (Peng Haowei);  Xia JB (Xia Jian-Bai);  Wang LW (Wang Lin-Wang);  Wei SH (Wei Su-Huai);  Deng, HX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. jbli@semi.ac.cn
Adobe PDF(379Kb)  |  Favorite  |  View/Download:1312/324  |  Submit date:2010/12/27
Impurities  Gaas1-xnx  Nitrogen  Gainnas  States  Traps  
Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 82, 期号: 12, 页码: Art. No. 125412
Authors:  Zhang LX (Zhang Lixin);  Zhou XF (Zhou Xiang-Feng);  Wang HT (Wang Hui-Tian);  Xu JJ (Xu Jing-Jun);  Li JB (Li Jingbo);  Wang EG (Wang E. G.);  Wei SH (Wei Su-Huai);  Zhang, LX, Nankai Univ, Sch Phys, Tianjin 300071, Peoples R China.
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Initio Molecular-dynamics  Electron Gases  Heterostructures  Transition  
Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides 期刊论文
PHYSICAL REVIEW B, 2008, 卷号: 77, 期号: 11, 页码: Art. No. 113202
Authors:  Wang, F;  Li, JB;  Li, SS;  Xia, JB;  Wei, SH;  Wang, F, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jbli@semi.ac.cn
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Special Quasirandom Structures  Augmented-wave Method  Basis-set  Semiconductors  Lattice  
Photoluminescence pressure coefficients of InAs/GaAs quantum dots 期刊论文
PHYSICAL REVIEW B, 2005, 卷号: 71, 期号: 24, 页码: Art.No.245315
Authors:  Luo JW;  Li SS;  Xia JB;  Wang LW;  Luo, JW, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: lwwang@lbl.gov
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Electronic-structure  
Energy bands and acceptor binding energies of GaN 期刊论文
PHYSICAL REVIEW B, 1999, 卷号: 59, 期号: 15, 页码: 10119-10124
Authors:  Xia JB;  Cheah KW;  Wang XL;  Sun DZ;  Kong MY;  Xia JB,Hong Kong Baptist Univ,Dept Phys,Hong Kong,Peoples R China.
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Gallium Nitride  Model  Semiconductors  States  Aln  
Quantum-well anisotropic forbidden transitions induced by a common-atom interface potential 期刊论文
PHYSICAL REVIEW B, 1999, 卷号: 60, 期号: 3, 页码: 1783-1786
Authors:  Chen YH;  Yang Z;  Wang ZG;  Bo X;  Liang JB;  Chen YH,Hong Kong Univ Sci & Technol,Dept Phys,Hong Kong,Peoples R China.
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Optical Anisotropy  Heterostructures  Asymmetry  
ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF [(ZNSE)(M)(CDSE)(N)](N)-ZNSE MULTIPLE-QUANTUM WELLS 期刊论文
PHYSICAL REVIEW B, 1994, 卷号: 50, 期号: 19, 页码: 14416-14420
Authors:  REN SF;  XIA JB;  HAN HX;  WANG ZP
Adobe PDF(669Kb)  |  Favorite  |  View/Download:677/237  |  Submit date:2010/11/15
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