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Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Xu YQ;  Li LH;  Pan Z;  Lin YW;  Wang QM;  Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(157Kb)  |  收藏  |  浏览/下载：1140/221  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Mu-m  
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)  |  收藏  |  浏览/下载：1192/219  |  提交时间：2010/11/15
Adsorption  Characterization  Radiation  Molecular Beam Epitaxy  Nitrides  Surface-emitting Laser  Quantum-wells  Operation  Range  
Optical transitions in GaNAs/GaAs single quantum well 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Luo XD;  Xu ZY;  Sun BQ;  Pan Z;  Li LH;  Lin YW;  Ge WK;  Luo XD Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(314Kb)  |  收藏  |  浏览/下载：1172/244  |  提交时间：2010/10/29
Ganas  Photoluminescence  Band Offset  Band Bowing Coefficient  Localized Exciton  Molecular-beam Epitaxy  Alloys  Temperature  Gaasn  
Crystallographic and magnetic properties of hydride R3Fe29-xTxHy (R=Y, Ce, Nd, Sm, Gd, Tb and Dy; T=V and Cr) 会议论文
MAGNETISM, MAGNETIC MATERIALS AND THEIR APPLICATIONS, 302-3, SAO PAULO, BRAZIL, JUN 07-11, 1998
作者:  Han XF;  Lin LY;  Baggio-Saitovitch E;  Xu RG;  Wang XH;  Pan HG;  Han XF Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(391Kb)  |  收藏  |  浏览/下载：1128/161  |  提交时间：2010/11/15
Magnetic Properties  Hydride  Hydrogenation  Saturation Magnetization  Curie Temperature  First-order Magnetization Process  R3fe29-xtxhy  r = y