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Growth temperature dependences of InN films grown by MOCVD 期刊论文
APPLIED SURFACE SCIENCE, 2008, 卷号: 255, 期号: 5, 页码: 3149-3152 Part 2
Authors:  Yang, CB;  Wang, XL;  Xiao, HL;  Zhang, XB;  Hua, GX;  Ran, JX;  Wang, CM;  Li, JP;  Li, JM;  Wang, ZG;  Yang, CB, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Jia 35,Qinghua Dong Rd,POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: cbyang@semi.ac.cn
Adobe PDF(534Kb)  |  Favorite  |  View/Download:1140/394  |  Submit date:2010/03/08
Inn  Mocvd  Mobility  
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文
APPLIED SURFACE SCIENCE, 2006, 卷号: 253, 期号: 2, 页码: 762-765
Authors:  Wang CM (Wang Cuimei);  Wang XL (Wang Xiaoliang);  Hu GX (Hu Guoxin);  Wang JX (Wang Junxi);  Li HP (Li Jianping);  Wang ZG (Wang Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: xlwang@red.semi.ac.cn
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Algan/aln/gan  Two-dimensional Electron Gas  Mocvd  Algan/gan Heterostructures  Polarization  Transistors  Ganhemts  Gas