中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共3条，第1-3条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 72 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Wang QY;  Nie JP;  Yu F;  Liu ZL;  Yu YH;  Wang QY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(121Kb)  |  收藏  |  浏览/下载：1305/267  |  提交时间：2010/11/15
Solid Phase Epitaxy  SilicOn On Sapphire (Sos)  Carrier Mobility  
New way to enhance the uniformity of self-organized InAs quantum dots 会议论文
COMPOUND SEMICONDUCTORS 1998, (162), NARA, JAPAN, OCT 12-16, 1998
作者:  Zhu HJ;  Wang H;  Wang ZM;  Cui LQ;  Feng SL;  Zhu HJ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(312Kb)  |  收藏  |  浏览/下载：1060/173  |  提交时间：2010/11/15
Molecular-beam Epitaxy  Threshold  Growth  Laser  
The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:  Wang ZM;  Feng SL;  Lu ZD;  Zhao Q;  Yang XP;  Chen ZG;  Xu ZY;  Zheng HZ;  Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(2780Kb)  |  收藏  |  浏览/下载：1191/142  |  提交时间：2010/11/15
Growth  Interdiffusion  Islands  Scale