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Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)  |  收藏  |  浏览/下载：1193/219  |  提交时间：2010/11/15
Adsorption  Characterization  Radiation  Molecular Beam Epitaxy  Nitrides  Surface-emitting Laser  Quantum-wells  Operation  Range  
Spin split cyclotron resonance in GaAs quantum wells 会议论文
PHYSICS AND CHEMISTRY OF NANOSTRUCTURED MATERIALS, HONG KONG, PEOPLES R CHINA, JAN, 1999
作者:  Wu XG;  Wu XG Chinese Acad Sci Inst Semicond NLSM Beijing 100864 Peoples R China.
Adobe PDF(2144Kb)  |  收藏  |  浏览/下载：794/95  |  提交时间：2010/10/29
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