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Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 会议论文
JOURNAL OF APPLIED PHYSICS
作者:  Chen J;  Fan WJ;  Xu Q;  Zhang XW;  Li SS;  Xia JB;  Chen, J, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore.
Adobe PDF(1459Kb)  |  收藏  |  浏览/下载：1328/208  |  提交时间：2010/03/09
Emission  
Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Wang Y;  Han WH;  Yang X;  Chen JJ;  Yang FH;  Wang, Y, Chinese Acad Sci, Res Ctr Semicond Integrated Technol, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(2039Kb)  |  收藏  |  浏览/下载：1432/318  |  提交时间：2010/03/09
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