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Optical transitions in GaNAs/GaAs single quantum well 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Luo XD;  Xu ZY;  Sun BQ;  Pan Z;  Li LH;  Lin YW;  Ge WK;  Luo XD Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(314Kb)  |  收藏  |  浏览/下载：1197/244  |  提交时间：2010/10/29
Ganas  Photoluminescence  Band Offset  Band Bowing Coefficient  Localized Exciton  Molecular-beam Epitaxy  Alloys  Temperature  Gaasn  
Cooperative spontaneous emission of excitons in the semiconductor microcavity 会议论文
VERTICAL-CAVITY SURFACE-EMITTING LASERS IV, 3946, SAN JOSE, CA, JAN 26-28, 2000
作者:  Liu S;  Lin SM;  Wang QM;  Liu S Chinese Academe Inst Semicond Natl Optoelect Integrat Lab Beijing 100083 Peoples R China.
Adobe PDF(237Kb)  |  收藏  |  浏览/下载：1105/217  |  提交时间：2010/10/29
Spontaneous Emission  Microcavity Anisotropy  Polarized Exciton  Surface-emitting Lasers  Polariton Photoluminescence  Cavity  Operation  
Characterization of CdSe and CdSe/CdS core/shell nanoclusters synthesized in aqueous solution 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Liu SM;  Guo HQ;  Zhang ZH;  Li R;  Chen W;  Wang ZG;  Liu SM Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(136Kb)  |  收藏  |  浏览/下载：1485/457  |  提交时间：2010/11/15
Cdse  Cdse/cds  Nanoclusters  Quantum Dots  Semiconductor Nanocrystallites  Size  Exciton  Clusters  Dark  
Mechanism on exciton-mediated energy transfer in erbium-doped silicon 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Lei HB;  Yang QQ;  Ou HY;  Wang QM;  Lei HB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(229Kb)  |  收藏  |  浏览/下载：1246/251  |  提交时间：2010/11/15
Er-doped Silicon  Photoluminescence  Energy Transfer  Al2o3 Wave-guides  Er  Electroluminescence  Epitaxy  Gaas